Silicon, Chemical Requirements

This approach allows the deposition of thin films at low temperatures. By comparison, polymer deposition generally requires very high temperatures. For instance, the chemical vapor deposition of silicon nitride requires a temperature of about 900°C, whereas the plasma chemical deposition requires a temperature of only 350°C. 

The curing process takes advantage of the versatile chemical property of silicones. Chemical reactivity is built in the polymer and allows the formation of silicone networks of controlled molecular architectures with specific adhesion properties. The general and inherent molecular properties of the PDMS polymer are conferred to the silicone network. Pure PDMS networks are mechanically weak and do not satisfy the adhesive and cohesive requirements needed for most applications. Incorporation of fillers like silica or calcium carbonate is necessary to reinforce the silicone network (see Composite materials). 

Refining. In order to produce silicon that meets the requirements of the chemical, ie, siUcones, and primary aluminum markets, the siUcon produced in the arc furnace requires further purification. The quaUty of siUcon for the chemical siUcones industry is critical with respect to the levels of aluminum and calcium present, and the primary aluminum grade of siUcon requires low levels of calcium, iron, and phosphoms. The impurity requirements for the secondary aluminum market are not as stringent, so long as the siUcon content is >98.5%. 

Another problem in the construction of tlrese devices, is that materials which do not play a direct part in the operation of the microchip must be introduced to ensure electrical contact between the elecuonic components, and to reduce the possibility of chemical interactions between the device components. The introduction of such materials usually requires an annealing phase in the construction of die device at a temperature as high as 600 K. As a result it is also most probable, especially in the case of the aluminium-silicon interface, that thin films of oxide exist between the various deposited films. Such a layer will act as a banier to inter-diffusion between the layers, and the transport of atoms from one layer to the next will be less than would be indicated by the chemical potential driving force. At pinholes in the AI2O3 layer, aluminium metal can reduce SiOa at isolated spots, and form the pits into the silicon which were observed in early devices. The introduction of a tlrin layer of platinum silicide between the silicon and aluminium layers reduces the pit formation. However, aluminium has a strong affinity for platinum, and so a layer of clrromium is placed between the silicide and aluminium to reduce the invasive interaction of aluminium. 

Attempts by Kao and others to enhance transparency by chemically removing impurities from glass met with little success the level of purity required was indeed comparable with that needed in silicon for integrated circuits. In the event, the required purification was achieved in the same way in which semiconductor-grade silicon is now manufactured, by going through the gas phase (silicon tetrachloride), which can be separated from the halides of impurity species because of dilTerences in vapour pressures. This breakthrough was achieved by R.D. Maurer and his... 

There are many applications for silicone adhesives, sealants, or coatings where the condensation curing systems are not suitable. This is because they are relatively slow to cure, they require moisture to cure that can itself be in some cases uncontrollable, and they evolve by-products that cause shrinkage. Adhesives needed in automotive, electronics, microelectronics, micro electromechanical systems, avionic, and other hi-tech applications are usually confined to vei7 small volumes, which can make access to moisture difficult. Also, their proximity to very sensitive mechanical or electronic components requires a system that does not evolve reactive chemicals. 

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