Silicon carbide characteristics

The engineering properties of electroless nickel have been summarhed (28). The Ni—P aHoy has good corrosion resistance, lubricity, and especiaHy high hardness. This aHoy can be heat-treated to a hardness equivalent to electrolytic hard chromium [7440-47-3] (Table 2), and the lubricity is also comparable. The wear characteristics ate extremely good, especiaHy with composites of electroless nickel and silicon carbide or fluorochloropolymers. Thus the main appHcations for electroless nickel are in replacement of hard chromium (29,30). 

Hefner, A., et ah, Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications, Conf. Record of the 2000 IEEE Industry Application Conf., Vol. 5, October 8-12, 2000, pp. 2948-2954. 

Considerable interest in the solid-state physics of silicon carbide, that is, the relation between its semiconductor characteristics and crystal growth, has resulted from the expectation that SiC would be useful as a high temperature-resistant semiconductor in devices such as point-contact diodes (148), rectifiers (149), and transistors (150,151) for use at temperatures above those where silicon or germanium metals fail (see Semiconductors). 

Research and development in the field are still continuing at a fast pace, particulady in the area of absorption and emission characteristics of the polymers. Several reasons account for this interest. First, the intractable poly dime thylsilane [30107-43-8] was found to be a precursor to the important ceramic, silicon carbide (86—89). Secondly, a number of soluble polysilanes were prepared, which allowed these polymers to be studied in detail (90—93). As a result of studies with soluble polymers it became clear that polysilanes are unusual in their backbone CT-conjugation, which leads to some very interesting electronic properties. 

Metals and ceramics (claylike materials) are also used as matrices in advanced composites. In most cases, metal matrix composites consist of aluminum, magnesium, copper, or titanium alloys of these metals or intermetallic compounds, such as TiAl and NiAl. The reinforcement is usually a ceramic material such as boron carbide (B4C), silicon carbide (SiC), aluminum oxide (A1203), aluminum nitride (AlN), or boron nitride (BN). Metals have also been used as reinforcements in metal matrices. For example, the physical characteristics of some types of steel have been improved by the addition of aluminum fibers. The reinforcement is usually added in the form of particles, whiskers, plates, or fibers. 

The descriptor was a product of the correlation weights, CW(Ik), calculated by the Monte Carlo method for each kth element of a special SMILES-like notation introduced by the authors. The notation codes the following characteristics the atom composition, the type of substance (bulk or not, ceramic or not), and the temperature of synthesis. The QSAR model constructed in this way was validated with the use of many different splits into training (n 21) and validation (n=8) sets. Individual sub-models are characterized by high goodness-of-fit (0.972 applicability domain of the model, it is not known if all the compounds (metal oxides, nitrides, mullite, and silicon carbide) can be truly modeled together. 

When carbon forms compounds with other atoms having rather high electronegativity (Si, B, etc.), the bonds are considered to be covalent. The compounds formed, especially SiC, have the characteristics of being hard, unreactive refractory materials. Silicon carbide has a structure similar to diamond, and it is widely used as an abrasive material. It is prepared by the reaction of Si02 with carbon ... 

Goodale, D. B., Reagan, P. Miskolczy, G., Lieb, D. and Huffman, F. N. "Characteristics of CVD Silicon Carbide Thermionic Converters", 16th Intersociety Energy Conversion Engineering Conference, Atlanta, GA, 1981. 

Numerous ceramics are deposited via chemical vapor deposition. Oxide, carbide, nitride, and boride films can all be produced from gas phase precursors. This section gives details on the production-scale reactions for materials that are widely produced. In addition, a survey of the latest research including novel precursors and chemical reactions is provided. The discussion begins with the mature technologies of silicon dioxide, aluminum oxide, and silicon nitride CVD. Then the focus turns to the deposition of thin films having characteristics that are attractive for future applications in microelectronics, micromachinery, and hard coatings for tools and parts. These materials include aluminum nitride, boron nitride, titanium nitride, titanium dioxide, silicon carbide, and mixed-metal oxides such as those of the perovskite structure and those used as high To superconductors. 

Each constituent atom of a covalent crystal is linked to its neighbours through directed covalent bonds. The crystal structure is determined by the spatial dispositions of these bonds. Because primary valence forces are involved, such solids are hard and have high melting points, e.g. diamond, silicon carbide, etc. Relatively few entirely covalent solids have been studied at elevated temperatures and it is, therefore, premature to comment on their decomposition characteristics. 

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