Silicon-based, nanoscale structures

In addition to the experimental aspects of the different types of materials, theoretical treatments also were discussed. These included the presentation of studies related to molecular vibrational dynamics, the problem of vibration-induced decay of electronic excited states, nanoscale spin-orbit coupling in two-dimensional silicon-based structures, and the growth of semiconductor clusters by combining both theoretical approaches with actual experimental data. 

Pavesi L, Turan R (eds) (2010) Silicon nanocrystals, Section 14 silicon nanocrystals in porous silicon and applications. Federal Republic of Germany Reece PJ, Lerondel G, Zheng WH, Gal M (2002) Optical microcavities with subnanometer linewidths based on porous silicon. Appl Phys Lett 81 4895 Robbie K, Beydaghyan G, Brown T, Dean C, Adams J, Buzea C (2004) Ultrahigh vacuum glancing angle deposition system for thin films with controlled three-dimensional nanoscale structure. Rev Sci Instrum 75(4) 1089... 

Abstract Photovoltaic cells have been dominated so far by solid state p-n junction devices made from silicon or gallium arsenide wavers or thin film embodiments based on amorphous silicon, CdTe and copper indium gallium diselenide (CIGS) profiting from the experience and material availability of the semiconductor industry. Recently there has been a surge of interest for devices that are based on nanoscale inorganic or organic semiconductors commonly referred to as bulk junctions due to their interconnected three-dimensional structure. The present chapter describes the state of the art of the academic and industrial development of nanostructured solar cells, with emphasis in the development of the dye-sensitized nanocristalline solar cell. 

The expectation of obvious positive effects from the development of all-silicon microphotonics increases the activity in the search for the ways of manufacturing of silicon lasers and light amplifiers. Among these approaches it is the most commonly encountered a use of specific properties of low-size silicon crystals, impurity rare-earth ions, and the Raman effect [1-3]. In the present paper, we consider (and propose for development) the promising, but insufficiently studied approach to the creation of silicon lasers. It is based on emission features of specific structural nanoscale imperfections of silicon crystals which can be called emissive structural defects (ESDs). No mention has been made of this approach in reviews [1,2] devoted to the problem. 

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