Short-channel transistor

A typical example of the observed hysteresis is shown in Figure 16.1 for a short channel transistor with channel length L = 740 nm and width w = 1000 pm. 

Keywords OFET (organic field effect transistor) Short channel transistor - Short... 

The characteristics of the short-channel transistor are shown in Fig. 19. The transfer characteristics are depicted in Fig. 19a and the output characteristics and the drain conductance gd in Fig- 19b. Due to the surface modification, the hole mobility is enhanced in the channel (i.e., parallel to the interface) and it is lower perpendicular to the interface which is not of interest for the transistor. From the transfer characteristics, the mobility in the channel has been determined in both the active and the saturation regions. The value extracted from the active region is 1.6 X 10 cm V s at a drain voltage of -IV. From the saturation region one obtains 2.8 x 10 cm V s at —8V. The extraction of different... 

Iniguez, B. Picos, R. Veksler, D. Koudymov, A. Shur, M. S. Ytterdal, T. Jackson, W. 2007. Universal compact model for long- and short-channel thin-film transistors. Proc. of the International TFT Conference (Jan 7). 

Micro-contact printing can be used in plastic electronics to form high-resolution source/drain electrodes with short channel lengths [14]. Depositing an organic semiconductor on top of these electrodes yields a transistor with a layout like that... 

Figure 5.5.23 illustrates the electrical properties of a representative nanoscale laminated transistor (channel width of 20 [tm and channel length of 150 mn). The transistor exhibits a lower charge-carrier mobility and on/off current ratio compared to laminated micron-size transistors (channel width of 20 pm and channel lengths of 2.5 and 100 pm). Zaumseil and coworkers attributed the differences to contact resistances and short-channel effects [88]. Methods to lower contact resistance, which may include the clever use of monolayer chemistty and conductive polymers as electrodes, are being explored [87,88]. 

Fulfilling multilayer and miniature structures of memory devices led to the introduction of new materials and sfrucfures. For the structure, the design rule decreases less than 70 nm and the short channel effect (SCE) phenomenon appears to have a bad influence on fhe device drive if exisf-ing planar transistor (TR) is applied. To solve this problem, studies are in progress to apply recessed charmel array TR and three-dimensional structured FinFET in DRAM and floating gate, twin SONOS, and FinFET SONOS in flash memory (Eigure 6.3). 

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