Saturation region

A rapid increase in diffusivity in the saturation region is therefore to be expected, as illustrated in Figure 7 (17). Although the corrected diffusivity (Dq) is, in principle, concentration dependent, the concentration dependence of this quantity is generally much weaker than that of the thermodynamic correction factor d ap d a q). The assumption of a constant corrected diffusivity is therefore an acceptable approximation for many systems. More detailed analysis shows that the corrected diffusivity is closely related to the self-diffusivity or tracer diffusivity, and at low sorbate concentrations these quantities become identical. 

Fig. 12. NMOSFET operated (a) in the linear (low drain voltage) region, where S is the grounded source contact,jy is the distance from source to drain, and dis differential increase and (b) at the onset of the saturation region, V-q = V-q The point Yindicates the channel pinch-off point. For Uq point...

Electrostatic fields applied slightly above the onset of the saturation region had little effect on product distribution (37). This presumably indicates that homogeneous ion-electron recombination is the same as neutralization at the electrodes, or that one is simply not observing the products of neutralization in either case. 

The introduction of the perfect gas law to the Clausius-Clapeyron equation (Equation (6.14)) allows us to obtain a more direct approximation to p p(T) in the saturation region. We use the following ... 

In the saturation region, at and above the pinch-off point, neglecting the effective channel length change due to the Vds value, due to the condition OIds/OVds = 0(thusVDs = Vgs—Vt), this equation becomes ... 

The temperature sensitivity of the saturation velocity, Vsat, used in Eq. (4.5) to describe the effect of the lateral field, is additionally considered. The saturation velocity is moderately affected by temperature changes however, when the temperature largely deviates from Tnom. there is a strong effect on the saturation region characteristics of the transistor. The temperature dependence of the saturation velocity is taken into account using the temperature coefficient, AT, [BSIM 3.v3,129] ... 

The working fluid for vapor cycles is alternately condensed and vaporized. When a working fluid remains in the saturation region at constant pressure, its temperature is also constant. Thus, the condensation or evaporation of a fluid in a heat exchanger is a process that closely approximates the isothermal heat-transfer processes of the Carnot cycle. Owing to this fact, vapor cycles closely approximate the behavior of the Carnot cycle. Thus, in general, they tend to perform efficiently. 

Rankine cycle operates mainly in the saturated region of its working fluid whereas the gas Brayton cycle processes are located entirely in the superheat or gas region. 

EXERCISE 7-Z Change the model parameters of Ml in the circuit above to define an enhancement MOSFET with the parameters K = 20 pA/V2 and VT = 3 V. MOSFET operation in the saturation region is governed by the equation ... 

In PSpice, the equation that defines the MOSFET operation in the saturation region is ... 

These two processes are so efficient that the yield of the formation of the ion radicals saturates in respect to the concentration of added styrene in the glasses, even at the low concentration of 101 1 mole-%. In this saturation region, the G value for the formation of the ion radicals is 1.3 in the 2-methyltetrahydrofuran glass and 0.86 in the n-butylchloride glass. 

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