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Semiconductors carbon nanotubes

A method for covalently incorporating Wilkinson s complex onto a multi-walled carbon nanotube is described. Semiconductor carbon nanotubes derived from these materials had mobilities and transconductance properties that were superior to those of existing semiconductors. [Pg.333]

Margulis, A.V., Sizikova, T.A. Theoretical study of third order nonlinear optical response of semiconductor carbon nanotube. Physica B, 245, 173-189 (1998)... [Pg.334]

Since the discovery of carbon nanotubes (CNTs) in 1991 [I], the band structures for CNTs have been calculated by a number of authors [2-7], They have predicted that CNTs can be metallic, narrow- or broad band-gap semiconductors. After macroscopic quantities of CNTs were synthesized [8], it has become possible to explore their practical properties. [Pg.76]

The approaches used for preparation of inorganic nanomaterials can be divided into two broad categories solution-phase colloidal synthesis and gas-phase synthesis. Metal and semiconductor nanoparticles are usually synthesized via solution-phase colloidal techniques,4,913 whereas high-temperature gas-phase processes like chemical vapor deposition (CVD), pulsed laser deposition (PLD), and vapor transfer are widely used for synthesis of high-quality semiconductor nanowires and carbon nanotubes.6,7 Such division reflects only the current research bias, as promising routes to metallic nanoparticles are also available based on vapor condensation14 and colloidal syntheses of high-quality semiconductor nanowires.15... [Pg.315]

The process begins with the synthesis of different semiconductor nanomaterials (e.g., single-walled carbon nanotubes and single-crystalline nanowires/... [Pg.432]

Cao, Q. et al. 2006. Highly bendable, transparent thin-film transistors that use carbon-nanotube-based conductors and semiconductors with elastomeric dielectrics. Adv. Mater. 18 304-309. [Pg.445]

Fig. 14.13 A carbon nanotube Schottky barrier formed from an (8,0) semiconductor nanotube joined by a 5-7 defect to a (7,1) metallic nanotube. Fig. 14.13 A carbon nanotube Schottky barrier formed from an (8,0) semiconductor nanotube joined by a 5-7 defect to a (7,1) metallic nanotube.
Georgakilas, V., et ah, Decorating carbon nanotubes with metal or semiconductor nanoparticles. Journal of Materials Chemistry, 2007.17(26) p. 2679-2694. [Pg.157]

Mitsui Chemicals is launching a new grade of carbon nanotube reinforced thermoplastic poly-imide, Aurum CNT, with supplementary specific properties such as dust reduction and antistatic behaviour. Targeted applications are, for example, processing jigs for semiconductor or hard disk manufacturing, and parts for hard disk drives. [Pg.839]

The conductive properties of SWCNTs were predicted to depend on the helicity and the diameter of the nanotube [112, 145]. Nanotubes can behave either as metals or semiconductors depending upon how the tube is rolled up. The armchair nanotubes are metallic whereas the rest of them are semiconductive. The conductance through carbon nanotube junctions is highly dependent on the CNT/metal contact [146]. The first measurement of conductance on CNTs was made on a metallic nanotube connected between two Pt electrodes on top of a Si/Si02 substrate and it was observed that individual metallic SWCNTs behave as quantum wires [147]. A third electrode placed nearby was used as a gate electrode, but the conductance had a minor dependence on the gate voltage for metallic nanotubes at room temperature. The conductance of metallic nanotubes surpasses the best known metals because the... [Pg.144]

Cottet A, Kontos T, Sahoo S, Man HT, Choi MS, Belzig W, Bruder C, Morpurgo AF, Schonenberger C (2006) Nanospintronics with carbon nanotubes. Semiconductor Sci Technol 2LS78-S95... [Pg.299]


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Semiconductors, single walled carbon nanotubes

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