Semiconductor growth behavior

CdSe particulate films could be transferred to solid 645 supports at any stage of their growth scanning tunneling spectroscopy on a conducting substrate indicated an n-type metal-insulator-semiconductor (MIS) junction behavior... 

One may expect that future work on the electrochemistry of diamond should take two paths, namely, an extensive investigation (search for new processes and applications of the carbon allotropes in the electrochemical science and engineering) and intensive one (elucidation of the reaction mechanisms, revealing the effects of crystal structure and semiconductor properties on the electrochemical behavior of diamond and related materials). It is expected that better insight into these effects will result in the development of standard procedures for thin-film-electrodes growth, their characterization, and surface preparation. 

The complexity of the system implies that many phenomena are not directly explainable by the basic theories of semiconductor electrochemistry. The basic theories are developed for idealized situations, but the electrode behavior of a specific system is almost always deviated from the idealized situations in many different ways. Also, the complex details of each phenomenon are associated with all the processes at the silicon/electrolyte interface from a macro scale to the atomic scale such that the rich details are lost when simplifications are made in developing theories. Additionally, most theories are developed based on the data that are from a limited domain in the multidimensional space of numerous variables. As a result, in general such theories are valid only within this domain of the variable space but are inconsistent with the data outside this domain. In fact, the specific theories developed by different research groups on the various phenomena of silicon electrodes are often inconsistent with each other. In this respect, this book had the opportunity to have the space and scope to assemble the data and to review the discrete theories in a global perspective. In a number of cases, this exercise resulted in more complete physical schemes for the mechanisms of the electrode phenomena, such as current oscillation, growth of anodic oxide, anisotropic etching, and formation of porous silicon. 

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