Semiconductors electrode interface

Fig. 9-9. Potentia] profile and band bending aaoss a semiconductor electrode interface 4 = electrostatic inner potential OHh)- potential in a space charge (a compact) layer.

According to Fig. 5.4, the potential at a semiconductor electrode interface is composed of a potential across the Helmholtz layer A< h and across the space charge layer A0s(., provided that the potential across the Gouy layer can be neglected. The electrode potential Up measured vs. a reference electrode is then given by... 

In what follows, we will now further review how EA spectroscopy has been employed, in some of the available literature, to gauge the built-in fields, the energy level lineup at organic semiconductor/electrode interfaces, and the physics of device operation [4,5,40,42,43,46,69,70,77,109,112,114,116,117,119-143]. 

Fukui K, Nakane M (1993) Effects of tin oxide semiconductor-electrode interface on gas sensitivity characteristics. Sens Actuators B 13-14 589-590... 

The reason for the exponential increase in the electron transfer rate with increasing electrode potential at the ZnO/electrolyte interface must be further explored. A possible explanation is provided in a recent study on water photoelectrolysis which describes the mechanism of water oxidation to molecular oxygen as one of strong molecular interaction with nonisoenergetic electron transfer subject to irreversible thermodynamics.48 Under such conditions, the rate of electron transfer will depend on the thermodynamic force in the semiconductor/electrolyte interface to... 

Semiconductor-electrolyte interface, photo generation and loss mechanism, 458 Semiconductor-oxide junctions, 472 Semiconductor-solution interface, and the space charge region, 484 Sensitivity, of electrodes, under photo irradiation, 491 Silicon, n-type... 

Koval CA, Howard JN (1992) Electron transfer at semiconductor electrode-liquid electrolyte interfaces. Chem Rev 92 411 33... 

Electric Breakdown in Anodic Oxide Films Physics and Applications of Semiconductor Electrodes Covered with Metal Clusters Analysis of the Capacitance of the Metal-Solution Interface. Role of the Metal and the Metal-Solvent Coupling Automated Methods of Corrosion Measurement... 

Kohei Uosaki received his B.Eng. and M.Eng. degrees from Osaka University and his Ph.D. in Physical Chemistry from flinders University of South Australia. He vas a Research Chemist at Mitsubishi Petrochemical Co. Ltd. from 1971 to 1978 and a Research Officer at Inorganic Chemistry Laboratory, Oxford University, U.K. bet veen 1978 and 1980 before joining Hokkaido University in 1980 as Assistant Professor in the Department of Chemistry. He vas promoted to Associate Professor in 1981 and Professor in 1990. He is also a Principal Investigator of International Center for Materials Nanoarchitectonics (MANA) Satellite, National Institute for Materials Science (NIMS) since 2008. His scientific interests include photoelectrochemistry of semiconductor electrodes, surface electrochemistry of single crystalline metal electrodes, electrocatalysis, modification of solid surfaces by molecular layers, and non-linear optical spectroscopy at interfaces. 

For semiconductor electrodes and also for the interface between two immiscible electrolyte solutions (ITIES), the greatest part of the potential difference between the two phases is represented by the potentials of the diffuse electric layers in the two phases (see Eq. 4.5.18). The rate of the charge transfer across the compact part of the double layer then depends very little on the overall potential difference. The potential dependence of the charge transfer rate is connected with the change in concentration of the transferred species at the boundary resulting from the potentials in the diffuse layers (Eq. 4.3.5), which, of course, depend on the overall potential difference between the two phases. In the case of simple ion transfer across ITIES, the process is very rapid being, in fact, a sort of diffusion accompanied with a resolvation in the recipient phase. 

Basic properties of semiconductors and phenomena occurring at the semiconductor/electrolyte interface in the dark have already been discussed in Sections 2.4.1 and 4.5.1. The crucial effect after immersing the semiconductor electrode into an electrolyte solution is the equilibration of electrochemical potentials of electrons in both phases. In order to quantify the dark- and photoeffects at the semiconductor/electrolyte interface, a common reference level of electron energies in both phases has to be defined. 

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