Dielectric electrode interface, organic semiconductor

In case of an organic p-type semiconductor as illustrated in Figure 10.51, in which the mobility of holes is much larger than the mobility of electrons, the organic layer becomes conductive at the interface to the dielectric layer when a negative bias is applied at the gate electrode. As in Si-based MOS-FETs the drain current (/p) can be controlled by the gate potential (1/ ) when a bias is applied between source and drain (lip). 

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