Schottky barrier energy diagram

Figure 9-22. Energy diagram ol a metal/ scmiconductor/meta Schottky barrier (0... workfunction, x,. electron affinity, /,... ionization potential, . ..bandgap, W... depletion width).

Figure 4. Energy diagram of a Schottky barrier formed at an n-type semiconductor-electrolyte interface...

A Schottky barrier junction is constructed by, for example, depositing Pd on n-CdS (Seker et al 2000). Its simplified energy band diagram is shown in Fig. 9.21 together with a voltage source that applies a suitable bias across the diode. 

Fig. 10.16. Energy band diagrams for (a) Schottky barrier situation and (b) tunneling situation. CB, conduction-band energy VB, valence-band energy F, Fermi energy level. (Reprinted from A. Gonzalez-Martin, thesis, Texas A M University, 1993.)...

Fig. 4.1. Example energy band diagrams for a semiconductor/metal contact and and a semiconductor p/n-heterocontact. The Schottky barrier height for electrons B,n is given by the energy difference of the conduction band minimum Ecb and the Fermi energy Ey. The valence and conduction band offsets A/ An and AEcb are given by the discontinuities in the valence band maximum Eyb and the conduction band minimum, respectively...

Fig. 5.2. Energy diagram of a metal/semiconductor/metal Schottky barrier under open-circuit conditions, when the metals have different work functions. work function, Xs electron affinity, IP ionization potential, Eg energy gap, W depletion...

Energy-band diagram of a forward biased Schottky barrier junction on an n-type semiconductor showing different transport... 

Hig. 4.3. Energy level diagram of a Schottky barrier consisting of a metal on an n-type semiconductor... 

Another method of realizing a photovoltaic detector is with a Schottky barrier made by depositing a metal onto the surface of a semiconductor. The energy level diagram for a Schottky barrier is shown in Fig. 4.3. Its current-voltage characteristic is [4.10]... 

Fig. 2.20 Double Schottky barrier in polycrystalline oxide layers (a) physical model (b) energy zone diagram (c) grain size influence on mechanism of polycrystalline MOX layer conductance. The filled and empty areas indicate high and low resistances, respectively [Idea from Yamazoe (1991) and Yamazoe and Miura (1992)]...

The role of the interfacial layer in metal-insulator-semi-conductor Schottky barriers (MIS SBs) has been investigated by Card and Rhoderick and Fonash . Considering figures 4 and 5 which represent the simplified energy band diagrams for n and p-type silicon MIS SBs respectively, under forward bias V, it can be... 

Fig. 30.7 Energy diagram of a metal/semiconductor/metal Schottky barrier (0, workfunction s, electron affinity IP, ionization potential g, band gap W, depletion width).

Schematic energy level diagrams of a metal/polymer/metal structure before and after the layers are in contact are shown in the top two drawings of Figure 11-6. Before contact, the metals and the polymer have relative energies determined by the metal work functions and the electron affinity and ionization potential of the polymer. After contact there is a built-in electric field in the structure due to the different Schottky energy barriers of the asymmetric metal contacts. Capacitance-voltage measurements demonstrate that the metal/polymer/metal structures are fully depleted and therefore the electric field is constant throughout the bulk of the structure [31, 35]. The built-in potential, Vhh i.e. the product of the constant built-in electric field and the layer thickness may be written...

Figure 4.27. (a) Schematic of a STM z- Ft injection spectrum (solid curve). The dashed curves represent typical STM tip displacements observed at a clean metal surface, (b) Energy band diagrams for STM tunnelling through a vacuum barrier into the organic thin film and (c) through a Schottky-like barrier with the tip in contact. In both cases, Ft < 0 relative to Ep is shown. Adapted from Muller et al, 2001. 

Three important elements of inorganic semiconductor device structures are shown in Figure 3. A Schottky contact between a metal and a semiconductor, to inject or collect electrons (or holes) in a semiconductor, is shown in Figure 3a. In this diagram, the Schottky contact is in forward bias, Vj it is easier for electrons to flow from the semiconductor into the metal than vice versa because of the smaller energy barrier that must be surmounted when electrons move in the semiconductor-to-metal direction. In... 

Field emission potential diagram. Large electric fields induce barrier narrowing, which increases the number of electrons tunnelling from the Fermi level in the metallic, electron-rich, surface into the vacuum. Variations in the density of occupied states, N E), and current density, J[E), as a function of electron energy. Surface contamination and charging effects (Schottky rounding) can be seen to drastically alter the potential profile. 

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