Schottky barrier energy-band diagram

Figure 4.27. (a) Schematic of a STM z- Ft injection spectrum (solid curve). The dashed curves represent typical STM tip displacements observed at a clean metal surface, (b) Energy band diagrams for STM tunnelling through a vacuum barrier into the organic thin film and (c) through a Schottky-like barrier with the tip in contact. In both cases, Ft < 0 relative to Ep is shown. Adapted from Muller et al, 2001. 

A Schottky barrier junction is constructed by, for example, depositing Pd on n-CdS (Seker et al 2000). Its simplified energy band diagram is shown in Fig. 9.21 together with a voltage source that applies a suitable bias across the diode. 

Fig. 10.16. Energy band diagrams for (a) Schottky barrier situation and (b) tunneling situation. CB, conduction-band energy VB, valence-band energy F, Fermi energy level. (Reprinted from A. Gonzalez-Martin, thesis, Texas A M University, 1993.)...

Fig. 4.1. Example energy band diagrams for a semiconductor/metal contact and and a semiconductor p/n-heterocontact. The Schottky barrier height for electrons B,n is given by the energy difference of the conduction band minimum Ecb and the Fermi energy Ey. The valence and conduction band offsets A/ An and AEcb are given by the discontinuities in the valence band maximum Eyb and the conduction band minimum, respectively...

Energy-band diagram of a forward biased Schottky barrier junction on an n-type semiconductor showing different transport... 

The role of the interfacial layer in metal-insulator-semi-conductor Schottky barriers (MIS SBs) has been investigated by Card and Rhoderick and Fonash . Considering figures 4 and 5 which represent the simplified energy band diagrams for n and p-type silicon MIS SBs respectively, under forward bias V, it can be... 

Figure 15-14. (a) Energy diagram of a metal l/semiconductor/metal 2 Schottky barrier under open circuit conditions, whereby the metals have different work-functions (j) work-function, /j electron affinity, IP ionization potential band gap, IF depletion width), (b) Charge generation process in single layer conjugated polymer device under short circuit conditions in the MIM model, VB valence... 

Fig. 30.7 Energy diagram of a metal/semiconductor/metal Schottky barrier (0, workfunction s, electron affinity IP, ionization potential g, band gap W, depletion width).

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