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Resolution of resists

TABLE IV. Factors that Affect the Resolution of Resists for Various Lithographic Options... [Pg.173]

A proper resolution of Che status of Che stoichiometric relations in the theory of steady states of catalyst pellets would be very desirable. Stewart s argument and the other fragmentary results presently available suggest they may always be satisfied for a single reaction when the boundary conditions correspond Co a uniform environment with no mass transfer resistance at the surface, regardless of the number of substances in Che mixture, the shape of the pellet, or the particular flux model used. However, this is no more than informed and perhaps wishful speculation. [Pg.149]

In order to investigate the friction properties of lubricant film in TFL, an apparatus with a floating device was developed by Shen et al. as shown in Fig. 17 [48]. The steel ball is fixed so that it does not roll in the experiment and a pure sliding has been kept. The measuring system of micro-friction force is composed of a straining force sensor with a resolution of 5 yu,N, a dynamic electric resistance strain gage, an AD data-collecting card, and a computer. [Pg.43]

Resolution of signs and symptoms typically occurs within a few days to a week in most cases. Monitor the patient daily for febrile episodes, as well as other vital signs, with expected normal values within 2 to 3 days of initiating antimicrobial therapy.3 Persistent signs or symptoms could be indicative of inadequate treatment or development of resistance. [Pg.1103]

A rapidly increasing number of publications on polysilanes documents current interest in these polymers (JJ. Polysilanes are potentially applicable in microlithography as high resolution UV-resists (2J, imageable etch barriers ), or contrast enhancement layers (4). They have been successfully used as precursors to Si-C fibers (5J and ceramic reinforcing agents ((L). Polysilanes have also initiated polymerization of vinyl monomers (J ). Doping of polysilanes have increased their conductivity to the level of semiconductors (8). Very recently polysilanes were used as photoconductors (9) and non-linear optical materials (10b... [Pg.78]

The incorporation of PDMSX into conventional novolac resins has produced potential bilevel resist materials. Adequate silicon contents necessary for O2 RIE resistance can be achieved without sacrificing aqueous TMAH solubility. Positive resist formulations using an o-cresol novolac-PDMSX (510 g/mole) copolymer with a diazonaphthoquinone dissolution inhibitor have demonstrated a resolution of coded 0.5 pm L/S patterns at a dose of 156 mJ/cm2 upon deep-UV irradiation. A 1 18 O2 etching selectivity versus hard-baked photoresist allows dry pattern transfer into the bilevel structure. [Pg.172]

High resolution negative resists are needed for masked ion beam lithography (MIBL) and for the fabrication of MIBL masks by E-beam lithography (EBL). The MOTSS copolymer resists were developed to obtain the resolution of fine features that a bilevel resist can best provide. The flexibility afforded by choosing the structure of the HS, the copolymer composition, and the molecular weight allows a resist to be tailored by simple synthesis adjustments to have the particular sensitivity and etch protection which best suits the application. [Pg.193]

Fredga was doubtlessly referring to the conflict between the advocates of the association theory and those who supported the long chain concept. The conflict of ideas came to a head in the period 1925 to 1930. In this period the respective protagonists presented their ideas in two important conferences and several decisive papers. By the end of this period resistance to the macromolecular viewpoint was reduced to a few holdouts, but resolution of the facts, as Fredga indicated, did not come easily. [Pg.35]

Cone. This type of crucible shape (Fig. 8 c) provides an increased contact area between crucible and its counterpart on the crucible holder. Especially in the combination TG-DTA this decreases the thermal resistance and allows a better resolution of the measured DTA-effect. [Pg.83]


See other pages where Resolution of resists is mentioned: [Pg.1004]    [Pg.564]    [Pg.270]    [Pg.565]    [Pg.1004]    [Pg.564]    [Pg.270]    [Pg.565]    [Pg.122]    [Pg.134]    [Pg.135]    [Pg.351]    [Pg.352]    [Pg.375]    [Pg.384]    [Pg.425]    [Pg.969]    [Pg.565]    [Pg.437]    [Pg.175]    [Pg.119]    [Pg.173]    [Pg.18]    [Pg.325]    [Pg.1184]    [Pg.1221]    [Pg.55]    [Pg.483]    [Pg.11]    [Pg.436]    [Pg.251]    [Pg.489]    [Pg.1]    [Pg.6]    [Pg.6]    [Pg.35]    [Pg.53]    [Pg.185]    [Pg.333]    [Pg.354]    [Pg.134]    [Pg.145]    [Pg.60]    [Pg.88]    [Pg.165]   
See also in sourсe #XX -- [ Pg.46 , Pg.47 ]




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