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Relative modulation

An efficient way of overcoming this difficulty is to use a reference fluorophore (instead of a scattering solution) (i) whose fluorescence decay is a single exponential, (ii) which is excitable at the same wavelength as the sample, and (iii) which emits fluorescence at the observation wavelength of the sample. In pulse fluorometry, the deconvolution of the fluorescence response can be carried out against that of the reference fluorophore. In phase-modulation fluorometry, the phase shift and the relative modulation can be measured directly against the reference fluorophore. [Pg.181]

From (7.32) it follows that coupling contributes to the V6 potential even if the latter term is absent in the bare potential U(d>). Both shaking and breathing vibration promote tunneling, but in a different way. Shaking makes the effective barrier narrower, while breathing lowers it. Similar to Section 4.2, we define a parameter that characterizes the relative modulation of the barrier by breathing modes (C = 0) ... [Pg.233]

As pointed out earlier, it has been observed that the diffusion coefficient of electrons in dye sensitised nanocrystalline Ti02 cells increases with light intensity, probably as the result of light-dependent trap filling. The use of small relative modulation amplitudes in IMPS measurements has the advantage that the diffusion coefficient of electrons can be considered to be determined primarily by the dc illumination intensity. [Pg.152]

Pulse fluorometry has been favoured over phase techniques since hitherto no general method has been available for determining the proportions and lifetimes of fluorescence components in complex systems. Weberhas presented an exact solution of the problem using the values of the phase shifts and relative modulation of the overall fluorescence of as many light-modulation frequency as there are components. The simplicity and speed of the numerical methods involved... [Pg.43]

Synthetic auxins which inhibit stomatal opening may do so if they are cannot stimulate the H -ATPase, but are effective in shifting the voltage-gating of the anion channels (so that the channels open at the prevailing V ,). Further patch clamp studies, quantifying the relative modulation by different auxins of H -ATPase and anion channel activity, could address this hypothesis. [Pg.354]

The above relations show how the phase shift and the relative modulation are related to the decay time. Although single frequency-domain FLIM has the advantage of... [Pg.167]

Because the scattmer and sani are rmt observed at the same time, the phase difference and relative modulation cannot be measuied at the same time. Ihslead, all measure-moils are perfimned relative to the refeseoce PMT (Figure 5dt). One fint measures the phase shift between die scat-iercr and reference PMT. These signals are drifted by an... [Pg.151]

Let us demonstrate some results of the calculations made in [163] for an harmonic input field with a spatial frequency cjg (Table 5.2). Such a type of field could be formed, e.g., in photosensitive liquid crystal cells, when a photoconductor is illuminated by two coherent light beams which interfere with each other [163]. The harmonic distribution of light, as a result of interference, creates the corresponding harmonic dependence of the controlling field potential on one of the substrates of the liquid crystal cell (Fig. 5.25). We can determine the intensity of diffiraction in the first maximum, which correlates with the averaged square of the detector profile (0 ) (5.89), and we can calculate the Relative Modulation Characteristic (RMC) of the layer... [Pg.286]

FIGURE 5.25. Diffraction of light by a homeotropic liquid crystal in the spatially nommiform harmonic field. Below Relative modulation characteristics max versus spatial frequency u)s of the field, u max and 0 )max characterize the resolution and sensitivity of the liquid crystal layer, respectively. Curves 1-6 correspond to different anchoring energies Ow = V0dlK33 (1) 0.133 (2) 0.665 (3) 1.33 (4) 6.65 (5) 66.5 (6) 133. [Pg.287]

The EXAFS intensity oscillations are described by Eq. 10.19, which gives the relative modulation, X, of the absorption coefficient, fi, of the atom as a function of the variable k (the photoelectron wave vector). [Pg.372]

Fig. 1.16 (A) Fluorescence (so/id curve) from a molecule that is excited with sinusoidally modulated light (dotted curve). If the fluorescence decays exponentially with single time constant T, the phase shift (4>) and the relative modulation of the fluorescence amplitude (w) are related to t and the angular frequency of the modulation m) by < = arctan((OT) and w = (1 + o> ) (Appendix A4). The curves shown here are calculated for t = 8 ns, cd = 1.257 x 10 rad/s (20 MHz) and 100% modulation of the excitation light (< = 0.788 rad, i = 0.705). (B) Phase shift (4>, solid curve) and relative modulation (m, dotted curve) of the fluorescence of a molecule that decays with a single exponential time constant, plotted as a functirai of the product on. The relationships among , m, r and m become more complicated if the fluOTescence decays with multiexponential kinetics (Appendix A4)... Fig. 1.16 (A) Fluorescence (so/id curve) from a molecule that is excited with sinusoidally modulated light (dotted curve). If the fluorescence decays exponentially with single time constant T, the phase shift (4>) and the relative modulation of the fluorescence amplitude (w) are related to t and the angular frequency of the modulation m) by < = arctan((OT) and w = (1 + o> ) (Appendix A4). The curves shown here are calculated for t = 8 ns, cd = 1.257 x 10 rad/s (20 MHz) and 100% modulation of the excitation light (< = 0.788 rad, i = 0.705). (B) Phase shift (4>, solid curve) and relative modulation (m, dotted curve) of the fluorescence of a molecule that decays with a single exponential time constant, plotted as a functirai of the product on. The relationships among <f>, m, r and m become more complicated if the fluOTescence decays with multiexponential kinetics (Appendix A4)...
The quantity measured in such experiments is the relative modulation of the probe laser-induced fluorescence intensity Ip-j which reflects the modulation of the lower level population N... [Pg.601]

Electron Spin Resonance Spectroscopy. Several ESR studies have been reported for adsorption systems [85-90]. ESR signals are strong enough to allow the detection of quite small amounts of unpaired electrons, and the shape of the signal can, in the case of adsorbed transition metal ions, give an indication of the geometry of the adsorption site. Ref. 91 provides a contemporary example of the use of ESR and of electron spin echo modulation (ESEM) to locate the environment of Cu(II) relative to in a microporous aluminophosphate molecular sieve. [Pg.586]

A third factor is the ease with which various membrane materials can be fabricated into a particular module design. Almost ah membranes can be formed into plate-and-frame, spiral, and tubular modules, but many membrane materials caimot be fabricated into hollow-fine fibers or capihary fibers. Finahy, the suitabiHty of the module design for high pressure operation and the relative magnitude of pressure drops on the feed and permeate sides of the membrane can sometimes be important considerations. [Pg.74]

Plate-and-frame systems are competitive in this appHcation despite their high cost, primarily because they can be operated at high temperatures with relatively aggressive feed solutions, for which spiral-wound modules might fad. [Pg.75]

Single-crystal sUicon has also been employed as substrate material, particularly in multichip module (MGM)-Si appUcations. As a substrate, sUicon offers good thermal conductivity and matches the GTE of the devices mounted on it it does, however, have a relatively high dielectric constant and is very britde. [Pg.526]

Amorphous Silicon. Amorphous alloys made of thin films of hydrogenated siUcon (a-Si H) are an alternative to crystalline siUcon devices. Amorphous siUcon ahoy devices have demonstrated smah-area laboratory device efficiencies above 13%, but a-Si H materials exhibit an inherent dynamic effect cahed the Staebler-Wronski effect in which electron—hole recombination, via photogeneration or junction currents, creates electricahy active defects that reduce the light-to-electricity efficiency of a-Si H devices. Quasi-steady-state efficiencies are typicahy reached outdoors after a few weeks of exposure as photoinduced defect generation is balanced by thermally activated defect annihilation. Commercial single-junction devices have initial efficiencies of ca 7.5%, photoinduced losses of ca 20 rel %, and stabilized efficiencies of ca 6%. These stabilized efficiencies are approximately half those of commercial crystalline shicon PV modules. In the future, initial module efficiencies up to 12.5% and photoinduced losses of ca 10 rel % are projected, suggesting stabilized module aperture-area efficiencies above 11%. [Pg.472]


See other pages where Relative modulation is mentioned: [Pg.415]    [Pg.171]    [Pg.370]    [Pg.235]    [Pg.171]    [Pg.169]    [Pg.104]    [Pg.415]    [Pg.171]    [Pg.370]    [Pg.235]    [Pg.171]    [Pg.169]    [Pg.104]    [Pg.312]    [Pg.68]    [Pg.445]    [Pg.1754]    [Pg.1981]    [Pg.2964]    [Pg.106]    [Pg.235]    [Pg.168]    [Pg.336]    [Pg.134]    [Pg.146]    [Pg.160]    [Pg.160]    [Pg.176]    [Pg.242]    [Pg.242]    [Pg.152]    [Pg.215]    [Pg.71]    [Pg.75]    [Pg.553]    [Pg.450]    [Pg.470]    [Pg.472]   
See also in sourсe #XX -- [ Pg.372 ]




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