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Raster analysis

Table 12.5 Scanning probe microscopy Raster analysis... Table 12.5 Scanning probe microscopy Raster analysis...
Element stmctures of chitincontaining sorbents are determined using standard methods. Behind the data of an element stmcture the contents of chitin in ChCS was calculated. The analysis of morphological frame of ChCS was conducted by a electron-microscopic method on a raster supermicroscope at increase from 500 up to 1000 times. For matching is samples ChCS were conducted IR reseai ch in the field of 400 - 4000 cm f... [Pg.288]

The results shown in Figure 6 above are an example of this mode of analysis, but include additional information on the chemical states of the Si. The third most frequently used mode of analysis is the Auger mapping mode, in which an Auger peak of a particular element is monitored while the primary electron beam is raster scanned over an area. This mode determines the spatial distribution, across the surface, of the element of interest, rather than in depth, as depth profiling does. Of course, the second and third modes can be combined to produce a three-dimensional spatial distribution of the element. The fourth operational mode is just a subset of the third mode a line scan of the primary beam is done across a region of interest, instead of rastering over an area. [Pg.322]

Imaging SIMS, used for spatially resolved elemental analysis. A focussed ion beam is rastered over the surface so that each point on the target is individually bombarded in turn, so that secondary ion emission is localized. The intensity of a particular secondary ion is monitored for each position of the primary beam and the result shown at the corresponding point of a synchronized oscilloscope display or computerized data system. In this way, pixel by pixel across the sample surface and in depth as the material is removed, three-dimensional information on the sample composition may be obtained. [Pg.73]

Si(Li) spectroscopy, with the capability of simultaneous quantitative analysis of 72 elements ranging from sodium through to uranium in solid, liquid, thin film and aerosol filter samples. The penetrating power of protons allows sampling of depths of several tens of microns, and the beam itself may be focussed, rastered or varied in energy. The use of a proton beam as an excitation source offers several advantages over other X-ray techniques, for example there is a higher rate of data accumulation across the entire spectrum which allows for faster analysis. [Pg.98]

Secondary ion mass spectra were measured using a Perkin-Elmer+PHI 3500 instrument. Experiments were carried out with 4 kV Ar ions at beam currents of 3 and 300 nanoamps. Spectra were measured to at least 500 daltons (d). Samples were prepared in the manner used for the XPS studies. For measurements on the pure complexes, sample charging occurred, as evidenced by the inability to record secondary ion mass spectra. To reduce charging, a low energy electron beam (50-400 eV) was rastered across the sample during SIMS analysis. Positive and negative ion SIMS spectra were recorded however, only positive ion spectra are of interest for this discussion. In the spectra only unipositive ions were detected, so that the mass numbers detected correspond to combinations of the various isotopes of the elements in the ion. Thus an ion at m/z 17 d is assigned to... [Pg.506]


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