R-doped semiconductors

Bryan, J. Daniel and Gamelin, Daniel R., Doped Semiconductor Nanocrystals ... 

R-doped fibers for amplifiers and lasers 580 5.3. R-doped semiconductors and single- ... 

R-doped semiconductors and single-mode semiconductor lasers by coupling to R-doped insulators... 

However, R-doped semiconductors have evolved into a whole new field due mainly to the hope of obtaining silicon-based optoelectronic devices (Polman et al. 1993), that is, even using an indirect-gap semiconductor with no active optical property of its own. This field has been recently reviewed by Pomrenke et al. (1993). 

Chapter 2 Doped Semiconductor Nanocrystals Synthesis, Characterization, Physical Properties, and Applications 47 J. Daniel Bryan and Daniel R. Gamelin... 

Jantsch, W., Przybylinska, H., Skierbiszewski, C., Lanz-erstorfer, S., Palmetshofer, L., 1996. In Coffa, S., Polman, A., Schwartz, R.N. (Eds.), Rare Earth Doped Semiconductors II. In MRS Symposium Proceedings, Vol. 422. Materials Research Society, Pittsburgh, p. 101. 

This chapter reviews recent studies on energy levels and excited state dynamics of lanthanides (R) in nano-structures, which include R-doped dielectric nano-crystals, implanted nano-particles of semiconductors, coated core-shell nano-particles, nano-tubes and nano-balls stuffed with R ions. New phenomena such as the action of confinement on ion-phonon interaction and its consequences for electronic transitions, energy transfer, and phase transitions are discussed in the light of experimental and theoretical studies reported in the literature. Although the review aims at being comprehensive and covers all the important aspects in the field, emphasis is given to identification and theoretical analysis of various mechanisms for... 

Dingle, R. Stormer, H.L. Gossard, A.C. Wiegmann, W. Electron mobilities in modulation-doped semiconductor heterojunction superlattices. Appl. Phys. Lett. 1978, 33, 665. 

Dingle R. (1987), Semiconductors and Semimetals Applications of Multiquantum Wells, Selective Doping, and Superlattices, Vol. 24, Academic Press, New York. 

Gilman J. M. A., Batchelor R. A. and Hamnett A. (1993), Surface processes at electrolyte highly-doped semiconductor interfaces analysed by electroreflectance modelling , J. Chem. Soc. Earaday Trans. 89, 1717-1722. 

In Fig. 4 (a) and (b) we compare, and contrast, the metal-insulator transition at r = 0 K in our divided metal with that of a macroscopic sample of a doped semiconductor. Si P. For the latter the average dopant separation, d, (and thus the electron carrier density) provides the key experimental control parameter separating the metallic [d < dc) and non-metallic d > dc) regimes. The metal-insulator tran-... 

J. C. Hwang and J. R. Brews, Electron activity coefficients in heavily doped semiconductors with small effective mass, J. Phys. Chem. Solids 32 (1971) 837-845. 

M. S. Lundstrom, R. J. Schwartz, and J. L. Gray, Transport equations for the analysis of heavily doped semiconductor devices, Solid State Electron. 24 (1981) 195-202. 

From these measurements, we can thus evaluate the flat band potential (which is equal to Ef for heavily doped semiconductor), absorption coefficient (a) for band gap light, diffusion length (L) and lifetime of the carrier (r). 

The P-N homojunction is the basis of inorganic solar cells in which two different doped semiconductors (n- t5rpe and /r-t5rpe) are in contact to make solar cells (Fig. 3.a). / -type semiconductors are atoms and compounds with fewer electrons in their outer shell, which could create holes for the electrons within the lattice of /r-t5rpe semiconductor. Unlike /r-types semiconductors, the -type have more electrons in their outer shell and sometimes there are exceed amoimt of electron on n-type lattice result lots of negative charges [5]. 

Most of the revival in this field in the late eighties is due to two factors the recent advent of powerful and efficient monochromatic pumping sources provided ly quantum-well semiconductor lasers and the confinement obtained ly a R-doped light-guiding active medium. This is the basis for the rapid development of R-doped fibers, new sources allowing, in particular, a 3-level CW laser scheme. 

FIGURE 16.9. Computed spectral reflectance R for a 0.2-pm-thick slab of a material characterized by a theory for heavily doped semiconductors with ionized impurity scattering of the charge carriers. The electron density is denoted n,.. (From Granqvist, C., Handbook of Inorganic Electrochromic Materials, Elsevier Science, 1995. With permission.)... 

To begin, let us explore how electrons can be confined in two dimensions. In certain situations it is possible to form a flat interface between two crystals. We will take x, y to be the coordinate axes on the interface plane and z the direction perpendicular to it the magnetic field will be H = Hi. A particular arrangement of an insulator and doped semiconductor produces a potential well in the direction perpendicular to the interface plane which quantizes the motion of electrons in this direction. This is illustrated in Fig. 7.9 the confining potential Vconf(z) can be approximated as nearly linear on the doped semiconductor side and by a hard wall on the insulator side. The electron wavefunctions V (r) can be factored into two parts ... 

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