Processes control growth type crystallizers

These apparent restrictions in size and length of simulation time of the fully quantum-mechanical methods or molecular-dynamics methods with continuous degrees of freedom in real space are the basic reason why the direct simulation of lattice models of the Ising type or of solid-on-solid type is still the most popular technique to simulate crystal growth processes. Consequently, a substantial part of this article will deal with scientific problems on those time and length scales which are simultaneously accessible by the experimental STM methods on one hand and by Monte Carlo lattice simulations on the other hand. Even these methods, however, are too microscopic to incorporate the boundary conditions from the laboratory set-up into the models in a reahstic way. Therefore one uses phenomenological models of the phase-field or sharp-interface type, and finally even finite-element methods, to treat the diffusion transport and hydrodynamic convections which control a reahstic crystal growth process from the melt on an industrial scale. 

The control of the shape of the solid/liquid interface during the whole growth process is, in general, and not only for Bridgman-type crystal-growth processes, of great importance for several reasons ... 

Determination of the optimal temperature (or supersaturation) trajectory for a seeded batch crystallizer is a well studied problem. This is a dynamic optimization or optimal control problem. The process performance is determined by the crystal size distribution and product yield at the final time. For uniformity of shape and size in the crystals in a seeded batch crystallization process, it is essential to ensure that the nucleation phenomena occurs to the minimum and mostly the seeded crystals grow to the desired size at a certain rate. If nucleation occurs in the initial phase, then there is a possibility that the nucleated crystal will compete with the seeded ones, thus if the phenomena is of late growth, then nucleation in the earlier phase is preferred. Thus, depending upon the process operation, many types of objective functions have been proposed [4]. 

The use of tailor made additives holds great promise in the area of crystal growth and morphology control. The routine selection and use of these type of additives will require a fundamental understanding of the mechanism which the additives work on a molecular basis. At the same time, the effect of solvent molecules on the crystal growth process is another related and important problem. In both instances, the relationship between internal aystal structure, aystal growth rate, solvent and impurities are needed to predict the habit of a crystal and thus allow seleaion of the proper conditions and components required to obtain a desired habit... 

When an ionic single crystal is immersed in solution, the surrounding solution becomes saturated with respect to the substrate ions, so, initially the system is at equilibrium and there is no net dissolution or growth. With the UME positioned close to the substrate, the tip potential is stepped from a value where no electrochemical reactions occur to one where the electrolysis of one type of the lattice ion occurs at a diffusion controlled rate. This process creates a local undersaturation at the crystal-solution interface, perturbs the interfacial equilibrium, and provides the driving force for the dissolution reaction. The perturbation mode can be employed to initiate, and quantitatively monitor, dissolution reactions, providing unequivocal information on the kinetics and mechanism of the process. 

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