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Process integration temperature

Whether heat integration is restricted to the separation system or allowed with the rest of the process, integration always benefits from colder reboiler streams and hotter condenser streams. This point is dealt with in more general terms in Chap. 12. In addition, when column pressures are allowed to vary, columns with smaller temperature differences are easier to integrate, since smaller changes in pressure are required to achieve suitable integration. This second point is explained in more detail in Chap. 14. [Pg.146]

Although the presented results prove the efficiency of radioscopy, this system have certain characteristics which justify to develop and employ further process integrated testing systems. One of this characteristics is that the integration of radioscopy in industrial applications is doubtful because of reasons of radiation protection. This means, that the results from radioscopy should rather be used to fit other systems (acoustic emission analysis or temperature analysis) for industrial applications. [Pg.12]

Especially for temperature-dependent partition processes, besides temperature-influenced humidity of the vapor phase, a thermostat device is recommended for development. The Baron TEC thermobox 200 and Desaga TEC thermobox respectively (Figure 5.25) can be adapted to suit current development chambers using a variable covering mask. A Peltier element with integrated temperatnre control... [Pg.122]

High-temperature reactants that can absorb C02 at elevated temperatures in a chemical reaction offer another way to avoid the energy penalties that are associated with creating low operating temperatures or high pressures in the absorption step. In such a system, the heat of absorption is delivered at a temperature that makes it economically attractive. A successful implementation of the injection of reaction-based sorbents will, therefore, require the incorporation of effective process integration schemes to minimize the parasitic... [Pg.574]

Processing temperatures, heat exchanger network, 13 222 Process integration... [Pg.762]

Cost of GasificatUm-Tiased Power Systems Comparing power options is complicated by the many different parameters that must be considered in making a cost determination coal cost coal properties, inclnding sulfur and moisture contents ambient temperature degree of process integration gas turbine model and gas cleanup method. These, and many other factors, have a significant impact on cost. [Pg.16]

In order to focus on the main issues of process integration, we disregard the distillation column for heavies, as well as the transalkylation section. A preliminary simulated flowsheet in Aspen Plus [9] is shown in Figure 6.8, with values of temperatures, pressures and heat duties. The fresh feed of propylene is llOkmol/h. Note that design specifications are used for the fine tuning of the simulation blocks. The fresh benzene is added in the recycle loop as makeup stream so as to keep the recycle flow rate constant. This approach makes the convergence easier. [Pg.187]

In this equation TH and Tc are the absolute temperatures at which the quantities of heat dQH and dQc are transferred to the fluid of the cyclic process. Integration gives the sum of all quantities dQ/ T for the entire cycle ... [Pg.83]

TiCl has been extensively used for the deposition of TiN thin films as the top electrode for Ta O dielectric capacitors as well as for barriers layers in A1 or Cu metalization because it has sufficient vapor pressure and is non-viscous liquid at room temperature. However, thermal decomposition of this precursor and elimination of Cl contamination in the film usually requires high deposition temperatures (> 600°C). As discussed later, the BST CVD process requires a low deposition temperature, less than roughly 450°C, due to issues of process integration and conformal deposition which render the, TiCl useless for this case. We need a metal-organic precursor. [Pg.212]

MOCVD process as well as the oxidation problem of the diffusion barrier, the low temperature MOCVD process is required which usually results in amorphous or weekly crystallized as-deposited thin films. Therefore, high temperature post-annealing is an absolute necessity. The upper limit temperature of the post-annealing is about 800°C considering the interdiffusion between the BST and electrodes at higher temperature and process integration issues such as degradation of the metal contact resistance. [Pg.232]

G. Lee (2001) Optimal design and analysis of refrigeration systems for low temperature processes, PhD Thesis, LIMIST, Department of Process Integration, Manchester, LTC... [Pg.72]


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