Positive resist quantum yields

The latest addition to this list of dry developing resist materials is a contribution from IBM s San Jose Research Laboratory (66-67) that evolved from efforts to design positive-tone resist materials that incorporate chemical amplification. These efforts were stimulated by the fact that the quantum yield of typical diazoquinones of the sort used in the formulation of positive photoresists is 0.2 to 0.3 thus, three or four photons are required to transform a single molecule of sensitizer. This places a fundamental limit on the photo-sensitivity of such systems. 

For positive lit electrodes one can register the drift of holes, and for negative ones- the drift of the electrons. The photosensitizer (for example Se) may be used for carrier photoinjection in the polymer materials if the polymer has poor photosensitivity itself. The analysis of the electrical pulse shape permits direct measurement of the effective drift mobility and photogeneration efficiency. The transit time is defined when the carriers reach the opposite electrode and the photocurrent becomes zero. The condition RC < tlr and tr > t,r should be obeyed for correct transit time measurement. Here R - the load resistance, Tr -dielectric relaxation time. Usually ttras 0, 1-100 ms, RC < 0.1 ms and rr > 1 s. Effective drift mobility may be calculated from Eq. (4). The quantum yield (photogenerated charge carriers per absorbed photon) may be obtained from the photocurrent pulse shape analysis. 

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