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Polyimide dielectric properties

POLYIMIDES AND OTHER HIGH-TEMPERATURE POLYMERS 5.2.2.3 Dielectric Properties and Moisture Uptake... [Pg.280]

Phthalazinone, 355 synthesis of, 356 Phthalic anhydride, 101 Phthalic anhydride-glycerol reaction, 19 Physical properties. See also Barrier properties Dielectric properties Mechanical properties Molecular weight Optical properties Structure-property relationships Thermal properties of aliphatic polyesters, 40-44 of aromatic-aliphatic polyesters, 44-47 of aromatic polyesters, 47-53 of aromatic polymers, 273-274 of epoxy-phenol networks, 413-416 molecular weight and, 3 of PBT, PEN, and PTT, 44-46 of polyester-ether thermoplastic elastomers, 54 of polyesters, 32-60 of polyimides, 273-287 of polymers, 3... [Pg.593]

The tangent of the capacitance phase angle has been shown to be a measure of the completeness of the anneal (2.) Based on this technique, we have data which would predict 30 minutes at 300°C is sufficient to obtain optimum dielectric properties. However, we have found chronogravimetric analysis of polyimide films to be more useful in defining optimum anneal conditions. [Pg.145]

Certain thermoplastic polyimides possess excellent resistances to high temperatures and chemicals, with Tgs ranging from 217 to 371 °C. Certain polyimides also exhibit excellent toughness and dielectric properties. The melt blending process of polyimides with other thermoplastic polymers is difficult due to polyimides high Tg, high melt viscosities, and incompatibility. A solution process is used, therefore, to achieve a semi-interpenetrating polyimide network... [Pg.315]

Adhesion of polyimides to inorganic substrates is of great importance to the microelectronics industry [1, 2]. The polyimide films are deposited most often by spin coating the polyamic acid (PAA) usually from a TV-methylpyrrolidone (NMP) solution onto the substrate surface followed by thermal imidization at temperatures up to 400<>C. The most studied polyimide is the pyromellitic dianhydride-oxydianiline (PMDA-ODA), which exhibits excellent mechanical and dielectric properties, but not so good adhesion characteristics. The latter has been generally overcome by application of an adhesion promoter, such as y-aminopropyltriethoxysilane [3-7]. The reactions of APS (coated from water solution) with the silicon dioxide surface as well as with polyamic acid have been well characterized by Linde and Gleason [4] however, we do not have such detailed information available on APS interaction with other ceramic surfaces. [Pg.411]

In addition to high breakdown strength, the electrical insulators for superconducting magnets must have excellent dielectric properties at cryogenic temperatures. Chant reported the results of measurements on dielectric constant and loss tangent (tan 5) for several polymers over the temperature range from 4.2 to 300 K [83], The variation of dielectric constant of samples as a function of temperature is shown in Fig. 15. The dielectric constants of nonpolar polymers, such as polyethylene, polypropylene and polytetrafluoroethylene, are substantially independent of temperature, whereas those of polar polymers except polyimide decrease by a maximum of 20% as the temperature is reduced. The values of tan 8 at the frequency of 75 cps for nonpolar polymers decreased by... [Pg.136]

In other chemical systems, such as tetrafunctional epoxies, polyimides, phenolics, and polyesters, there have been few attempts 64,65) to establish quantitative relationships between chemical kinetics and dielectric properties. [Pg.29]

In this work, we present the effect of 193 nm pulsed UV high intensity radiation on polyimide, a polymer well known for its applications in solid-state technology (thermal stability and dielectric properties). We have used XPS in order to determine the evolution of chemical surface composition versus laser fluence and have obtained some attractive informations about these modifications induced by UV laser radiation. [Pg.162]

Some general conclusion from these studies are (1) Cu/PI TFML structures have excellent thermal and mechanical stability under extremes of temperature, humidity, and radiation (2) the adhesion of polyimide is highly dependent on interface chemistry and surface preparation (3) PI rapidly absorbs and desorbs water, which has an appreciable effect on its dielectric properties and thus the electrical charactersitics of TFML interconnections the electrical design tolerances must accommodate these variations or the package must be hermetically sealed (4) properly baked and sealed TFML packages can maintain MIL-STD internal moisture levels of less than 5000 ppm at 100°C. [Pg.477]

Figure 4. Dielectric properties for polyimide-Teflon composites. Figure 4. Dielectric properties for polyimide-Teflon composites.
The dielectric properties of two different thermoset films derived from bis-benzocyclobutene monomers were described. The dielectric constant was 2.65 + 0.1. The dissipation factor was below 0.001 above 1.0 kHz. These values are significantly lower than those reported for polyimide thin films. Therefore, the BCB films described in this work are attractive candidates for interlevel dielectrics in dense multilevel interconnection structures. [Pg.209]

The dielectric properties of substrates depend heavily on the chemistry of the constituent raw materials. The presence of polar chemical groups within the molecules increases the dielectric constant. The relatively simple molecular structures of polyethylene (CH2 - CH2) and polytetrafluorethylene (CF2 - CF2) would be expected to have low dielectric constants. Epoxy resins and polyimides have relatively high dielectric constant values since they have complex molecular structures. [Pg.469]

Amic acids, effect on dielectric properties of polyimides, 64... [Pg.477]

Xie et al. [2005] studied the influence of BT 100-nm particles on the dielectric properties of polyimide (PI) matrix. BT is commonly used, due to its high dielectric permittivity. The dielectric permittivity (e ) of PI/BT composites versus / increases... [Pg.541]


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See also in sourсe #XX -- [ Pg.104 ]




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