Poly -based photoresists

KONG Poly aery late-Based Photoresist Lamination... 

A number of polymers are capable of fulfilling these demanding requirements. Typically negative photoresists are based on cyclised poly(l,4-isoprene). These polymers are prepared by dissolving poly(l,4-isoprene) in an appropriate solvent and subjecting it to thermal degradation. This is followed by treatment with acid to produce the cyclised material (see Reaction 8.8). 

While "conventional positive photoresists" are sensitive, high-resolution materials, they are essentially opaque to radiation below 300 nm. This has led researchers to examine alternate chemistry for deep-UV applications. Examples of deep-UV sensitive dissolution inhibitors include aliphatic diazoketones (61-64) and nitrobenzyl esters (65). Certain onium salts have also recently been shown to be effective inhibitors for phenolic resins (66). A novel e-beam sensitive dissolution inhibition resist was designed by Bowden, et al a (67) based on the use of a novolac resin with a poly(olefin sulfone) dissolution inhibitor. The aqueous, base-soluble novolac is rendered less soluble via addition of -10 wt % poly(2-methyl pentene-1 sulfone)(PMPS). Irradiation causes main chain scission of PMPS followed by depolymerization to volatile monomers (68). The dissolution inhibitor is thus effectively "vaporized", restoring solubility in aqueous base to the irradiated portions of the resist. Alternate resist systems based on this chemistry have also been reported (69,70). 

We have developed a novel silicone-based positive photoresist (SPP) for two-layer resist systems. SPP is composed of an acetylated poly(phenylsilsesquioxane)... 

Interest in solution inhibition resist systems is not limited to photoresist technology. Systems that are sensitive to electron-beam irradiation have also been of active interest. While conventional positive photoresists may be used for e-beam applications (31,32), they exhibit poor sensitivity and alternatives are desirable. Bowden, et al, at AT T Bell Laboratories, developed a novel, novolac-poly(2-methyl-l-pentene sulfone) (PMPS) composite resist, NPR (Figure 9) (33,34). PMPS, which acts as a dissolution inhibitor for the novolac resin, undergoes spontaneous depolymerization upon irradiation (35). Subsequent vaporization facilitates aqueous base removal of the exposed regions. Resist systems based on this chemistry have also been reported by other workers (36,37). 

Research has also been aimed at the development of more-transparent base-soluble matrix resins. For example, novolacs prepared from pure p-cresol absorb less strongly at 250 nm than do typical photoresist novolacs containing a mixture of cresol isomers. Unfortunately, p-cresol novolac is only sparingly soluble in aqueous base and has limited usefulness (28, 57). Other examples of more-transparent matrix resins include poly(dimethyl glutarimide) (PMGI) (58) and copolymers of methyl methacrylate (MMA) and methacrylic acid (MAA) [P(MMA-MAA)]. 

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