Physical vapor transport

Mercuric iodide crystals grown by physical vapor transport on Spacelab 3 exhibited sharp, weU-formed facets indicating good internal order (19). This was confirmed by y-ray rocking curves which were approximately one-third the width of the ground control sample. Both electron and hole mobiUty were significantly enhanced in the flight crystal. The experiment was repeated on IML-1 with similar results (20). 

Fig. 2. Researcher Dan Barrett (Westinghouse Science Technology Center) checks the hot (2400°C) crystal growfli furnace that he designed for physical vapor transport growth of single crystals of silicon carbide...

FIGURE 2.1.1 A sketch of the physical vapor transport (PVT) growth furnace (top) and an example of the temperature profile along the axis of the quartz mbe (bottom). 

Sunderasan et al. prepared SiC nanowires by catalyst-assisted microwave heating-assisted physical vapor transport from a source 4H-SiC wafer [50]. The diameter of nanowires was in the range of 15-300 nm and their length in several microns. These SiC nanowires are grown through VLS mechanism at 1,650-1,750 °C. 

Sundaresan SG, Davydov AV, Mark D, Vaudin MD, Levin I, Maslar JE, Tian YL, Rao MV (2007) Growth of silicon carbide nanowires by a microwave heating-assisted physical vapor transport process using group VIII metal catalysts. Chem Mater 19 5531-5537... 

Sadaharu, J., Kentaro, K., Mitsuru, T., 2014. Growth process of pentacene crystals obtained by physical vapor transport technique. Japanese Journal of Applied Physics 53, 115506. 

On the other hand, bulk crystals of 4H-SiC and 6H-SiC are made by a physical vapor transport (seeded sublimation growth) technique known as the modified-Lely method [32]. High-quality bulk materials (threading dislocation... 

DJ Larkin, PG Neudeck, JA Powell, LG Matus. Site-competition epitaxy for controlled doping of CVD silicon carbide. Institute of Physics Conference Series No. 137. London IDP, 1994, p 51. HM Hobgood, RG Glass, G Augustine, RH Hopkins, J Jenny, M Skowronski, WC Mitchel, M Roth. Semi-insulating 6H-SiC grown by physical vapor transport. Appl Phys Lett 66 1364, 1995. GL Pearson, J Bardeen. Electrical properties of pure silicon and sdicon aloys containing boron and phosphorus. Phys Rev 75 865, 1949. 

Reynolds et al. [23] (bulk crystals grown by a seeded physical vapor transport method). Thonke et al. [45] (bulk crystals grown by seeded chemical vapor transport). 

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