Physical vapor deposition processing steps

The interconnecting holes are narrow and deep (at times less than 0.25 im wide and up to 2 im or more in depth) and, after a diffusion-barrier layer is applied, it must be filled completely with a high-conductivity metal (usually aluminum or tungsten) to provide the low-resi stance plug for inter-layer connections. Typically, CVD provides better step coverage and conformity than sputtering and other physical-vapor deposition processes. 

For the formation of a metallic film in addition to thick film silk-screen technique, thin film metallization is another means for the film deposition. Deposition of thin film can be accomplished by either physical or chemical means, and thin film technology has been extensively used in the microelectronics industry. Physical means is basically a vapor deposition, and there are various methods to carry out physical vapor deposition. In general, the process involves the following 1) the planned deposited metal is physically converted into vapor phase and 2) the metallic vapor is transported at reduced pressure and condensed onto the surface of the substrate. Physical vapor deposition includes thermal evaporation, electronic beam assisted evaporation, ion-beam and plasma sputtering method, and others. The physical depositions follow the steps described above. In essence, the metal is converted into molecules in the vapor phase and then condensed onto the substrate. Consequently, the deposition is based on molecules and is uniform and very smooth. 

The substrate is first coated, for instance, via electroless or physical vapor deposition with a thin (< 1 pm) metallic layer, which in turn is patterned by photolithography and wet etching. This layer serves two roles, as a plating base and as an electrically conducting layer for the finished structures. In the subsequent step a sacrificial layer, of about 5 pm in tliickness, is deposited on the substrate and also patterned by photolithography and wet etching. Titanium is used most often as the sacrificial material because it adheres well to the resist and to the electrodeposited layer and can be etched with hydrofluoric acid that does not attack other materials such as chromium, silver, nickel, copper, and which are usually used in the LIGA process. 

Chemical vapor deposition (CVD) is a process whereby a thin solid film is synthesized from the gaseous phase by a chemical reaction. It is this reactive process that distinguishes CVD from physical deposition processes, such as evaporation, sputtering, and sublimation.8 This process is well known and is used to generate inorganic thin films of high purity and quality as well as form polyimides by a step-polymerization process.9-11 Vapor deposition polymerization (VDP) is the method in which the chemical reaction in question is the polymerization of a reactive species generated in the gas phase by thermal (or radiative) activation. 

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