Photoluminescence devices

Akins et al. successfully immobilized polyoxometaloeuropates [(Eu2PWio038)4(W30s (H20)2(0H)4)] inside the channels of MCM-41 mesoporous molecular sieve material by means of the incipient wetness method. For proper host-guest interactions, amine groups were introduced into the system as a result of an aminosilylation procedure. The photoluminescent behavior of the composite at room temperature indicates a characteristic trivalent europium emission pattern corresponding to Dq transitions. Such a composite might represent a new material with potential applications as a photoluminescent device or phosphor [85]. 

The electroluminescence spectra of the single-layer devices are depicted in Figure 16-40. For all these OPV5s, EL spectra coincided with the solid-state photoluminescence spectra, indicating that the same excited states are involved in both PL and EL. The broad luminescence spectrum for Ooct-OPV5-CN" is attributed to excimer emission (Section 16.3.1.4). 

Fig. 1. Absorption and photoluminescence dashed line) spectra of a thin film of LPPP 26 and electroluminescence solid line) spectrum of an ITO / LPPP 26 (60 nm) / A1 device (from [50])...

Numerous ternary systems are known for II-VI structures incorporating elements from other groups of the Periodic Table. One example is the Zn-Fe-S system Zn(II) and Fe(II) may substimte each other in chalcogenide structures as both are divalent and have similar radii. The cubic polymorphs of ZnS and FeS have almost identical lattice constant a = 5.3 A) and form solid solutions in the entire range of composition. The optical band gap of these alloys varies (rather anomalously) within the limits of the ZnS (3.6 eV) and FeS (0.95 eV) values. The properties of Zn Fei-xS are well suited for thin film heterojunction-based solar cells as well as for photoluminescent and electroluminescent devices. 

Zinc sulfide, with its wide band gap of 3.66 eV, has been considered as an excellent electroluminescent (EL) material. The electroluminescence of ZnS has been used as a probe for unraveling the energetics at the ZnS/electrolyte interface and for possible application to display devices. Fan and Bard [127] examined the effect of temperature on EL of Al-doped self-activated ZnS single crystals in a persulfate-butyronitrile solution, as well as the time-resolved photoluminescence (PL) of the compound. Further [128], they investigated the PL and EL from single-crystal Mn-doped ZnS (ZnS Mn) centered at 580 nm. The PL was quenched by surface modification with U-treated poly(vinylferrocene). The effect of pH and temperature on the EL of ZnS Mn in aqueous and butyronitrile solutions upon reduction of per-oxydisulfate ion was also studied. EL of polycrystalline chemical vapor deposited (CVD) ZnS doped with Al, Cu-Al, and Mn was also observed with peaks at 430, 475, and 565 nm, respectively. High EL efficiency, comparable to that of singlecrystal ZnS, was found for the doped CVD polycrystalline ZnS. In all cases, the EL efficiency was about 0.2-0.3%. 

Small gold clusters (<100 atoms) have become the subject of interest because of their use as building blocks of nanoscale devices and because of their quantum-size effects and novel properties such as photoluminescence, magnetism, and optical activity [427]. 

The zone of recombination can be very small as was shown by Aminaka et al. [225] by doping only a thin layer (5 nm) in the device by a red emission material. By observing the ratio of host and dopant emission, the authors were able to show that the recombination zone of the device was as thin as 10 nm. The emitted light is usually coupled out at the substrate side through the transparent anode. As a rule, the electroluminescence spectrum does not differ much from the photoluminescence spectrum. 

P. M. Fauchet, Porous Silicon Photoluminescence and Electroluminescent Devices C. Delerue, G. Allan, and M. Lannoo, Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites L. Bros, Silicon Polymers and Nanocrystals... 

Work is ongoing to reduce defects in SiC material. One of the more interesting concepts is the reduction of defects through epitaxial growth on porous SiC substrates [64]. This approach has clearly demonstrated a reduction in intrinsic defects, as evidenced by photoluminescence measurements. It is too early to tell whether this technique can provide a path forward for the bipolar devices but it will clearly find its applicability in several areas where SiC will have a market. 

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