Defect Phases

In order to account for the real 3D structure of cylindrical microdomains, we denote the configurations in Fig. 22a, e and c, g as cylinder-phase defects (cyl-dislocation and +1/2 cyl-disclination), and the configurations in Fig. 22b,f and d,h as matrix defects (m-dislocation and m-disclination). In our systems, cyl-dislocations generally develop during the early stages of film annealing when the overall defect density is high. In well-equilibrated films, cyl-dislocations are less frequent as compared to m-dislocations. 

Guillaume AJ, Benjamin F, Sicuranza B, Deutsch S, Spitzer M. Luteal phase defects and ectopic pregnancy. Fertil Steril 1995 63 30-3. 

F. Visualization of Hexagonal Phase Defects in SDS-Formamide Systems... 

Suh, B.Y. Betz, G. 1993. Altered luteinizing hormone pulse frequency in early follicular phase of the menstrual cycle with luteal phase defect patients in women. Fertil. SteriL, 60, 800-805. 

Sample Dopant Doping number (atomic ratio) Fe2+ /Fe3+ Crystal phase Defect concentration (x) of Fe2+ in Fei xO... 

The state of the amorphous phase, the structure of the crystalline phase, defects in the crystals and external impurities all influence the formation and behaviour of radicals in solid polymers. Mechano-radicals are formed in mechanically stressed samples. One of the characteristics of mechano-radicals is high reactivity at low temperatures compared with the corresponding radicals formed by photo-irradiation [136, 2012, 2013]. 

This simple treatment of liquid crystalline defects is only applicable to nematics, and the detailed appearance of disclination lines will differ from the simple structures described above because of differences between the elastic constants for splay, twist and bend. In smectic phases, defects associated with positional disorder of layers will also be important, and some smectic phase defects such as edge dislocations have topologies similar to those described for crystals. The defect structures of liquid crystals contribute to the characteristic optical tex-... 

Fig. 3. Vector diagram of the current in a parallel representation of a dielectric. E = Voltage, V 7 = total curent. A 7c = capacitive component of current 7rp = resistive component of current 6 = phase (power factor) angle S = loss (phase defect) angle f = frequency of applied voltage Cp = parallel capacitance, F and = parallel resistance, electric constant and loss index to give a complex dielectric constant, = - je", of which the dielectric constant, e, is the real part and the loss index, e", the theoretical part.

The hardness of a material is usually defined as the resistance to deformation and is usually measured as the permanent deformation of a surface by a specifically shaped indenter under a given load. This does not give an indication of the plastic deformation associated with loading. The hardness of a material may be influenced by grain size, dispersed phases, defect structure, microstructure, density, temperature, deformation rate, etc. For films and coatings there may be substrate influences on the deformation that affect the measurements. As a rule, the coating should be ten times the indentation depth to obtain meaningful results. Surface effects may also influence the measurements for thin films, particularly those with oxide layers. 

---