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Oxidation depth, optical

For optical determinations of oxidation depth, irradiated samples were cut in cross section, potted in Shell Epon 828 epoxy, and cured overnight at 90°C with a diethanolamine catalyst. (Potting with a... [Pg.419]

Micro IR spectroscopy is an extremely useful method for the study of oxidation profiles. Optical densities are plotted as a function of the depth at... [Pg.523]

The development of the neutron depth profiling technique has been motivated by the importance of boron in both optical and microelectronic materials. Boron is widely used as a p-type dopant in semiconductor device fabrication and in the insulating oxide barriers applied as an organometallic or in vapor phase deposition glasses. [Pg.169]

Calculation of the photolysis rate of nitric oxide must include the predissociation process which occurs at wavelengths less than 192 nm. In particular, predissociation occurs (Figure 4.43) in the 5 bands, the (3 bands (v > 6) and the e bands (v > 3). Callear and Pilling (1970 a,b) indicate that emission dominates predissociation in the e bands. At zero optical depth, the contribution of the 7 bands is small compared to those of the 5 and / bands. [Pg.234]

PAS has been found to be an ideal technique for the study of surfaces and adsorbed species. In studies of optically thin samples, pulsed laser excitation has been shown to enable sensitivities of 10 to be obtained. The degree of chemical modiflcation of silica gel surfaces has been monitored by PAS. A linear relationship between the photoacoustic signal and the amount of carbon or nitrogen adsorbed on the surface was found. PAS has also been used to study the photoinduced transient formed when eosine Y was adsorbed onto ZnO powder, and the thin oxide layers (<4nm thick) on a copper electrode. An investigation of layered samples has shown that PAS may be capable of depth discrimination. ... [Pg.22]


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Optical depth

Oxidation depth, optical determinations

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