Organic semiconductor growth mechanisms

Solution-Liquid-Solid (SLS) growth of semiconductor nanowires by Wang etal. (2006). The synthesis proceeds by a solution-based catalysed growth mechanism in which nanometer-scale metallic droplets catalyse the decomposition of metallo-organic precursors and crystalline nanowire growth. 

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

Until 1995, micrometer scale whiskers of the lll-IV semiconductors have been grown only by metal-catalyzed or metal-organic CVD processes at relatively high temperatures, e.g., SiSOO C. Lack of useful crystallization mechanisms for highly covalent non-molecular solids has so far prevented their growth at lower process temperatures. A recent breakthrough [18]... 

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