Nitrogen nitrides

Nitrogen nitriding of steel Aluminum nitride Ammonia nitrification inhibitor Etridiazole... 

When hot surfaces react with active nitrogen, nitriding occurs. Because elements, such as aluminum, chromium, and titanium readily form nitrides, the integrity of the oxide film is at risk. To form a sfable profecfive oxide film, a nickel confent on the order of 35-40% is required. 

Only thallium of the Group III elements is affected by air at room temperature and thalliumflll) oxide is slowly formed. All the elements, however, burn in air when strongly heated and, with the exception of gallium, form the oxide M2O3 gallium forms a mixed oxide of composition GaO. In addition to oxide formation, boron and aluminium react at high temperature with the nitrogen in the air to form nitrides (BN and AIN). 

Aluminium nitride can also be prepared by heating a mixture of aluminium oxide and carbon in nitrogen in an electric arc furnace ... 

Ammonia is also produced when an ionic nitride is hydrolysed, for example magnesium nitride, produced when magnesium burns in nitrogen ... 

The conducting polymer poly(sulfur nitride) is unusual in that it is crystalline, consisting of chains of sulfur and nitrogen packed in parallel. 

Material System. There are two basic techniques for the industrial synthesis of Si3N powder, although other methods are available (36). The older and most widely used method is the nitridation of siHcon. SiHcon is heated in a nitrogen [7727-37-9] atmosphere at temperatures of 1100—1450°C in... 

Hafnium begins to react with nitrogen at about 900°C to form a surface nitride film, and reacts rapidly with hydrogen at about 700°C to form hydrides (qv). The hydrogen diffuses rapidly and converts the bulk metal into the brittle hydride. 

Normally, lithium hydride ignites in air only at high temperatures. When heated it reacts vigorously with CO2 and nitrogen. With the former, lithium formate is obtained. Reaction at high temperature with nitrogen produces lithium nitride. Therefore, dry limestone or NaCl powders are used to extinguish LiH fires. Lithium hydride reacts exothermically with moist air and violently with water. 

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Lithium Nitride. Lithium nitride [26134-62-3], Li N, is prepared from the strongly exothermic direct reaction of lithium and nitrogen. The reaction proceeds to completion even when the temperature is kept below the melting point of lithium metal. The lithium ion is extremely mobile in the hexagonal lattice resulting in one of the highest known soHd ionic conductivities. Lithium nitride in combination with other compounds is used as a catalyst for the conversion of hexagonal boron nitride to the cubic form. The properties of lithium nitride have been extensively reviewed (66). 

The magnesium nitride [12057-71 -5] produced does not form a stable film. If sufficient nitrogen is present this reaction can be self-sustaining. The nitride produced can react with water to form ammonia [7664-41 -7]. 

P/M steels can be heat treated in the same manner as cast or wrought steels. They may be austenitized, quenched, and tempered. Surface hardening includes pack or gas carburization or nitriding, ie, heating in a nitrogen-containing atmosphere. Because of the greater amount of exposed surface area in the form of porosity, a protective atmosphere is needed (see Metal surface treatments). 

The complexity of the apparatus needed for ion implantation makes this method of case hardening of limited application. Further, the case depth is considerably lower than that produced by carburizing or nitriding. The depth of implantation of nitrogen in a steel is about 0.00006 cm (19), ie, so thin that it is difficult to measure the hardness profile by conventional microhardness measurements. 

Liquid Nitriding. As in gas nitriding, the process is carried out below the austenite region, and hardening is associated with the formation of hard nitrides in the ferrite. Liquid cyanide salts are used with others to provide the source of nitrogen. 

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