Nitrogen nanocrystalline films

B. Fausett, M. C. Granger, M.L. Hupert, J. Wang, G. M. Swain, D. M. Gruen, The electrochemical properties of nanocrystalline diamond thin-films deposited from C60/Argon and Methane/Nitrogen gas mixtures, Electroanal., vol. 12, pp. 7-15, 2000. 

Figure 6.5 Pore size distribution in a nanocrystalline TiC>2 film as determined by nitrogen adsorption. Reprinted from P. Bonhote, E. Gogniat, S. Tingry, C. Barbe, N. Vlachopoulos, F. Lenzmartn, P. Comte and M. Gratzel, ]. Phys. Chem., B, 102,1498 (1998). Copyright (1998)...

Palnitkar UA, et al. Adhesion properties of nitrogen ion implanted nltra-nanocrystalline diamond films on sihcon substrate. Diamond Relat Mater 2008. 

Tang, J.W., et al.. Mechanism of 0-2 Production from Water Splitting Nature of Charge Carriers in Nitrogen Doped Nanocrystalline Ti02 Films and Factors Limiting 0-2 Production. Journal of Physical Chemistry C, 2011. 115(7) p. 3143-3150. 

On this basis, we focused on the sol-gel synthesis and characterization of nanocrystalline copper oxide thin films with the aim to achieve a good control over film chemical composition [66]. In the preparation of such systems, stoichiometry and phase composition represent a major concern, and they can be suitably tailored by a proper choice of the molecular precursors and of the annealing conditions. The chemical composition and copper oxidation state were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray excited Auger electron spectroscopy (XE-AES). Copper oxide thin films (thickness = lOOnm) were produced from copper acetate and were subsequently heated between 100 and 900 °C in different flowing gas atmospheres, i.e. air, nitrogen and forming gas (4% H2 in N2). 

The Raman spectrum of nanocrystalline silicon was used to determine the amounts of SiHs, SiH2 and SiH groups present/ IR measurements revealed vSiH bands in the initial stages of porous silicon formation on silicon surfaces vSiH and vSiN IR bands were used to probe hydrogen-bonding properties of nitrogen-doped silicon thin films Surface-IR observation of 5SiH modes showed the formation of Si-H units by decomposition of H2O on a clean Si(100)-(2 X 1) surface ... 

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