Porous silicon formation

A. Valance. Porous silicon formation Stability analysis of the silicon-electrolyte interface. Phys Rev B 52 8323, 1995. 

A. Splinter, O. Bartels, and W. Benecke. Thick porous silicon formation using implanted mask technology . Sensors and Actuators B76 (2001), 354-360. 

I. Ronga, A. Bsiesy, F. Gaspard, F. Herino, M. Ligeon, and F. Muller, Electrical characterization of the silicon-electrolyte interface in the conditions of porous silicon formation, J. Electrochem. Soc. 138, 1403, 1991. 

V. Labunov, I. Baranov, and V. Bondarenko, Investigation of porous silicon formation during anodic treatment in aqueous HE, Thin Solid Films 64, 479, 1979. 

A. V. Rao, F. Ozanam, and J. N. Chazalviel, In situ fourier-transform electromodulated infrared study of porous silicon formation Evidence for solvent effects on the vibrational linewidths, J. Electrochem. Soc. 138 153, 1991. 

C. M. A. Ashruf, P. J. French, P. M. M. C. Bressers, and J. J. Kelly, Galvanic porous silicon formation without external contacts, Censors ActHators A74, 118, 1999. 

N. Chi, D. L. Philips, and K. Y. Chan, In situ photoluminescence characterization of porous silicon formation. Thin Solid Films 342, 142, 1999. 

L. A. Jones, O. Yukseker, and D. F. Thomas, Dependence of photochemically etched porous silicon formation on photoetching wavelength and power, J. Vac. Sci. Technol. A14(3), 1505, 1996. 

J. Rappich and H. J. Lewerenz, Photo and potential controlled nano porous silicon formation on N silicon An in-situ FTIR investigation. Thin Solid Films 276, 25, 19%. 

P. Allongue, C. H. de Villeneuve, M. C. Bernard, J. E. Peou, A. Boutry-Forveille, and C. Levy-Clement, Relationship between porous silicon formation and hydrogen incorporation, Thin Solid Films 297, 1, 1997. 

A. Valance, Theoretical model for early stages of porous silicon formation fromn- andp-Types silicon... 

M. Guendouz, P. Joubert, and M. Sarret, Effect of crystallographic directions on porous silicon formation on patterned substrates. Mater. Sci. Eng. B69-70, 43, 2000. 

J. Li, S. Cai, and S. Zhang, Constant and stephke behavior of the cross-section dimension of Si quantum wires and quanmm confinement effect in porous silicon formation. Chin. Sci. Bull. 41(24), 2060, 1996. 

P. Jaguiro, S. La Monica, S. Lazarouk, and A. Ferrari, Theoretical model of porous silicon formation,... 

R.L. Smith, S.D. Collins, Porous silicon formation mechanisms,/. Appl. Pbys., 71, R1-R22 (1992). 

---