Nanowire assembly

P. J. Pauzauskie, A. Radenovic, E. Trepagnier, H. Shroff, P. D. Yang, and J. Liphardt, Optical trapping and integration of semiconductor nanowire assemblies in water. Nature Materials 5 p. 97-101 (2006). 

Freer EM, Grachev O, Duan X, Martin S, Stmnbo DP. High-yield self-limiting single-nanowire assembly with dielectrophoresis. Nat. Nanotechnol. 2010 5 525-530. Doi 10.1038/nnano.2010.106. 

The majority of examples of hybrid systems are based on /i-structured tectons and have been used as fibrous scaffolds for nanowires assemblies that use other tectons have a wider scope, and have been used to produce a range of interestingly shaped discrete objects. 

Shaikh AV, Rajaram SM, Pathan HM, Min BK, Joo OS, Han SH (2008) CdSe thin film growth Primarily amorphous nanograins to self-assembled nanowires. J Electroanal Chem 615 175-179... 

Bates et al. reported the construction and characterization of a gold nanoparticle wire assembled using Mg -dependent RNA-RNA interactions for the future assembly of practical nanocircuits [31]. They used magnesium ion-mediated RNA-RNA loop-receptor interactions, in conjunction with 15 nm or 30 nm gold nanoclusters derivatized with DNA to prepare self-assembled nanowires. A wire was deposited between lithographically fabricated nanoelectrodes and exhibited non-linear activated conduction by electron hopping at 150-300 K (Figure 16). 

Wen XG, Zhang WX, Yang SH (2002) Solution phase synthesis of Cu(OH)2 nanoribbons by coordination self-assembly using Cu2S nanowires as precursors. Nano Lett 2(12) 1397—1401... 

Duan, X. 2007. Assembled semiconductor nanowire thin-films for high-performance flexible macroelectronics. MRS Bull. 32 134-141. 

Sanghyun, J. Lee, K. Janes, D. B. Yoon, M-H. Facchetti, A. Marks, T. J. 2005. Low operating voltage ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. Nano Lett. 5 2281-2286. 

The fundamental physical properties of nanowire materials can be improved even more to surpass their bulk counterpart using precisely engineered NW heterostructures. It has been recently demonstrated that Si/Ge/Si core/shell nanowires exhibit electron mobility surpassing that of state-of-the-art technology.46 Group III-V nitride core/shell NWs of multiple layers of epitaxial structures with atomically sharp interfaces have also been demonstrated with well-controlled and tunable optical and electronic properties.47,48 Together, the studies demonstrate that semiconductor nanowires represent one of the best-defined nanoscale building block classes, with well-controlled chemical composition, physical size, and superior electronic/optical properties, and therefore, that they are ideally suited for assembly of more complex functional systems. 

Figure 11.9. NW LED. (a) Crossed InP nanowire LED. (top) Three-dimensional (3D) plot of light intensity of the electroluminescence from a crossed NW LED. Light is only observed around the crossing region, (bottom) 3D atomic force microscope image of a crossed NW LED. (inset) Photoluminescence image of a crossed NW junction, (b-c) Multicolor nanoLED array, (b) Schematic of a tricolor nanoLED array assembled by crossing one n-GaN, n-CdS, and n-CdS NW with a p-Si NW. The array was obtained by fluidic assembly and photolithography with ca. 5- xm separation between NW emitters, (c) Normalized EL spectra obtained from the three elements. [Reprinted with permission from Ref. 59. Copyright 2005 Wiley-VCH Verlag.]...

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