Monolithic Pixel Arrays

In this section, we describe two pixel options which are being considered hybrid pixel arrays in which the readout electronics and the silicon detector array are constructed as two separate silicon chips that are then bump-bonded together, and the monolithic pixel detector in which the readout electronics is on the same substrate as the silicon detector. R D for both technologies is currently being pursued for potential use at the SSC laboratory. 

For infrared microspectroscopy, single-element detectors are used for point and mapping measurements. More recently, array detectors have been applied for spectroscopic imaging in the infrared. In infrared focal plane arrays, the monolithic silicon design used in CCDs is replaced by a hybrid construction. In a hybrid detector, photon detection occurs in a semiconductor layer (indium antimonide, mercury cadmium telluride, and doped-silicon are typical detector materials), while the readout and amplification stages are carried out in a silicon layer. The two layers are electrically connected at each pixel through indium bump-bonds . Other innovations such as microbolometer arrays also show promise for spectroscopic imaging applications. 

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