Metal Oxide Chemical Vapor Deposition

MOCVD [Metal oxide chemical vapor deposition] A general name for a group of processes used to make micro-electronic devices by depositing thin films of metal oxides on suitable substrate surfaces by means of chemical vapor deposition. See CVD. 

Characteristics of Tin Oxide Thin Films on a Poly Ethylene Terephthalate Substrate Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition... 

Izu, N. Murayama, N. Shin, W. Matsubara, I. Kanzaki, S. 2004. Resistive oxygen sensors using cerium oxide thin films prepared by metal organic chemical vapor deposition and sputtering. Jpn. J. Appl. Phys. 43 6920-6924. 

A.l. Alkaline Earth Metal Oxides Doped with Alkali Metals by Chemical Vapor Deposition... 

Zhang [3] prepared iridium oxide nanotubes using metal-organic chemical vapor deposition with (methylcyclopentadienyl)(l,5-cyclooctadiene) iridium, (I), followed by heating from 200°C to 500°C. 

In 1986, the presence of superconductivity was observed in a metal oxide system (see Electronic Structure of Solids). This ceramic was brittle, not ductile as for metallic samples. Chemical Vapor Deposition is one method for preparing metal oxide compositions. All presently known superconducting metal oxide compositions contain a group 2 element (Figure 7). Owing to the importance of this area to the future development of the inorganic chemistry of the group 2 elements, it is covered in the present context. 

Organotransition metal oxides or organo 0x0 complexes see Oxo Complex) represent a fast expanding area for early transition metals of groups 4 to 7, due to their relationship with catalytic species formed on the surface of oxides under catalytic conditions. Furthermore, they may also supply a convenient set of volatile starting materials for application in Metal-Organic Chemical Vapor Deposition and related techniques of solid-state and surface chemistry. Most of... 

In recent years, the interest for the preparation of alkylzinc amides has been motivated by their potential apphcation as catalyst for polymerization of propylene oxide, and also as precursors for the MOCVD see Metal-Organic Chemical Vapor Deposition) process. 

CVD = chemical vapor deposition DH = double heterostructure H = homojunction device ITO = indium tin oxide LEDs = light emitting diodes LPE = liquid phase epitaxy MBE = molecular beam epitaxy MOCVD = metal organic chemical vapor deposition PPV = p-phenylenevinyl-ene PEDOT = polyethylene dioxythiophene TFEL = Thin film electroluminescent VPE = vapor phase epitaxy. 

Lanthanum oxide thin film was grown on Si substrates by the metall-organic chemical vapor deposition (MOCVD) method (400-650°C) [27]. Thin silicon oxynitride layer on the Si substrate functions well to suppress the interfacial reaction between lanthanum oxide and Si and results in the increase in the dielectric constant of deposited lanthanum oxide. The formed oxynitride layer is also effective in decreasing the leakage current. 

Bekermann D, Rogalla D, Becker HW, Winter M, Fischer RA, Devi A. Volatile, monomeric, and fluorine-free precursors for the metal organic chemical vapor deposition of zinc oxide. Eur. J. Inorg. Chem. 2010 9 1366-1372. DOI 10.1002/ ejic.200901037. 

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