Metal-organic vapor deposition MOCVD

With the use of epitaxial growth methods such as molecular beam epitaxy (MBE) or metal organic vapor deposition (MOCVD), it is possible to grow single crystalline ternary alloy systems such as AljrGai j As or quaternary systems such as Ga lhi xAsyPi y with controlled composition as well as to form heterostructures by growing one compound semiconductor epitaxially on top of another compound semiconductor. (Epitaxy means that the lattice periodicity is maintained across the growth interface.)... 

All the processes mentioned above are characterized by the fact that a support is treated with a suitable solution of the precious metal. An alternative preparation method in which a solid react with a metal precursor from the gas phase is metal-organk vapor deposition (MOCVD). In this process, a volatile metal organic precursor strikes the hot surface of the support. This contact leads to the immediate thermal decomposition of the surface with formation of a metal species on the support that can be further treated thermally, often under reducing gas atmospheres. 

Different approaches to introduce the metal in the framework ( incipient wetness impregnation, MOCVD loading of highly PCPs host lattices by metal organic vapor deposition, etc.) provide wide opportunities for the modification of the adsorption properties of MOFs/COFs [32,110,115,184-186]. 

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

Dimethylcadmium has found use as a volatile source of Cd for metal organic chemical vapor deposition (MOCVD) production of cadmium-containing semiconductor thin films (qv) such as CdS, Cdi 2 Hg -Te, or Cdi 2 Mn -Te, as multiple quantum weU species (32). Semiconductor-grade material seUs for... 

Silver(I) /3-diketonate derivatives have received significant attention due to the ease with which they can be converted to the elemental metal by thermal decomposition techniques such as metal organic chemical vapor deposition (MOCVD).59 The larger cationic radius of silver(I) with respect to copper(I) has caused problems in achieving both good volatility and adequate stability of silver(I) complexes for the use in CVD apparatus. These problems have been overcome with the new techniques such as super critical fluid transport CVD (SFTCVD), aerosol-assisted CVD (AACVD), and spray pyrolysis, where the requirements for volatile precursors are less stringent. 

GaN as a semi-conducting material for electronics is about to be launched on the market, especially for the use in blue- and UV-emitting LEDs and laser diodes [2]. The material is deposited on crystalline substrates like sapphire using thin-film epitactical techniques. Often, metal-organic chemical vapor deposition (MOCVD) is used. The necessity for such technologies limits the production rate and pushes up costs. 

YDC has been prepared by various methods, including solid-state reaction, coprecipitation, glycine-nitrate process and metal organic chemical vapor deposition (MOCVD). Table 1.4 shows that the properties depend on the preparation method [118,119,127,129,130], Zha et al. [129] have studied the influence of sintering... 

There are numerous materials, both metallic and ceramic, that are produced via CVD processes, including some exciting new applications such as CVD diamond, but they all involve deposition on some substrate, making them fundamentally composite materials. There are equally numerous modifications to the basic CVD processes, leading to such exotic-sounding processes as vapor-phase epitaxy (VPE), atomic-layer epitaxy (ALE), chemical-beam epitaxy (CBE), plasma-enhanced CVD (PECVD), laser-assisted CVD (LACVD), and metal-organic compound CVD (MOCVD). We will discuss the specifics of CVD processing equipment and more CVD materials in Chapter 7. 

Metal organic chemical vapor deposition (MOCVD)... 

Methods of manufacturing mercury cadmium telluride material have evolved from bulk melt growth to liquid phase epitaxy (LPE) technology, vapor phase epitaxy (VPE) and metal-organic chemical vapor deposition (MOCVD) [5-7], These new methods have made it possible to manufacture large two-dimensional focal plane arrays [8-11],... 

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