Metal-organic chemical vapour deposition MOCVD technique

III-V nitrides (InN, GaN and AIN) are made by CVD using (CH3)3M (M=In, Ga and Al) and NH3 as precursors [6]. HgCdTe, which is used in infrar (IR) detectors, is made by the reaction of the dimethyl derivatives of the metals [7]. PbSnTe is also synthesized by CVD [8]. High-quality thin films of superconducting YBa CUjO,. have been prepared by metal organic chemical vapour deposition (MOCVD) techniques using p-diketonate derivatives of Y, Ba and Cu as precursors [9]. 

In chemical vapor deposition (CVD) reactive vapor precursors react to produce solid materials in the gas phase or at the solid-gas interface on the substrate surface at appropriate temperatures. Typical precursors used in the CVD process are metal hydrides, metal chlorides, and metal organic compounds. In the case that the precursor species are metal organic compounds, the process is called metal-organic chemical vapor deposition (MOCVD). The precursor molecules are introduced into a reactor sometimes with a carrier gas and decompose by means of heat, irradiation of UV light, or electrical plasma formed in the gas. Thermal CVD is the most commonly used method. This technique has an advantage that refractory materials can be vapour-deposited at relatively low temperatures,... 

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