MESFET operating temperature

C4.1 General remarks on GaN-based transistors and potential for high temperature/power operation C4.2 GaN FET structures MESFET, MISFET, JFET and MODFET... 

State-of-the-art Schottky diodes operate up to 400°C [28] see FIGURE 5. The stability of the Schottky diodes limits the maximum temperature of operation of SiC MESFETs since SiC itself can withstand much higher temperatures. State-of-the-art ohmic contacts can operate at significantly higher temperatures than Schottky contacts. 

Different types of SiC Field Effect Transistors, Metal Oxide Semiconductor Transistors (MOSFETs), Metal Semiconductor Field Effect Transistors (MESFETs), and Junction Field Effect Transistors (JFETs) compete for future applications in high temperature and harsh environment electronics. This Datareview details these various types of FETs, the structures used and the performances obtained. Interesting recent developments and potential applications, such as FET integrated circuits, a hybrid operational amplifier and an inverter circuit are also outlined. 

A 3C-SiC MESFET type inverter circuit was recently fabricated at Howard University by Harris et al [35] (see FIGURE 18). This inverter was operational at room temperature with a maximum DC gain of 2.5 and a unity gain at a frequency of 0.143 MHz. 

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