Mass Selected Ion Beam Deposition IBD

The methods mostly used for nano-cBN deposition are ion-beam-assisted deposition (IBAD) [199] mass selected ion beam deposition (IBD) [200] ion plating [201] RF- or magnetron sputtering [202] and laser deposition [203] (Fig. 13). 

Ion beam deposition employs an ion bombardment onto the substrate with high energetic nitrogen ions. Boron is vaporized as ions (mostly by an electron beam) and shot onto the substrate together with the nitrogen ions. 

This method was used in 1983 by Satou and Fujimoto [204]. Boron was evaporated by an electron beam, and nitrogen ions (40 keV) were shotonto the substrate (Ta, NaCl). The deposited layers had a thickness of 6800 A and the growth rate was up to 100 A/min. 

IBAD allows one to control all decisive parameters for the c-BN deposition (e.g. ion energy, ion flux, and ion/boron ratio). Typical deposition parameters are 300-1200 eV ion energy, 0.4-0.8 mA/cm2 ion current, 2 x 10-4 mbar pressure, 300 °C substrate temperature, ratio ions/boron atoms 0.5-3 [196,199, 205-207]. 

The B+ and N+ ions are extracted from an ion source with high voltage (e.g. 30 kV), and after mass selection and deceleration (10 eV to 1 keV) the ions are 

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