Magnetic semiconductors transition-metal oxides

It should be mentioned that, of the other first-row transition metal oxides crystallizing with the NaCl structure, none has been found to superconduct down to 2.5 K. Some of these oxides undergo magnetic ordering at low temperature and most behave as semiconductors at all temperatures. These would include MnO, FeO, CoO, and NiO. Studies performed on CuO, which has a different crystalline structure, showed only semiconducting behavior to very low temperatures (1.9 K). 

Although this theory explains theoretically the experimental observations in the case of ReOj, TiO, and VO, it fails to verify the conductivity characteristics of transition metal oxides such as TiO, VO, MnO, and NiO. Band theory explains the metallic characteristics but fails to account for the electrical properties of insulators or semiconductors and metal-nonmetal transitions because of neglect of electronic correlation inherent in the one-electron approach to the problem. Although there is no universal model for description of the conductivity, magnetic and optical properties of a wide range of materials (e.g., simple and complex oxides, sulfides, phosphides), several models have been proposed (for details, see Refs. 447-453). Of these, a generally accepted one is that described by Goodenough (451). 

Oxides play many roles in modem electronic technology from insulators which can be used as capacitors, such as the perovskite BaTiOs, to the superconductors, of which the prototype was also a perovskite, Lao.sSro CutT A, where the value of x is a function of the temperature cycle and oxygen pressure which were used in the preparation of the material. Clearly the chemical difference between these two materials is that the capacitor production does not require oxygen partial pressure control as is the case in the superconductor. Intermediate between these extremes of electrical conduction are many semiconducting materials which are used as magnetic ferrites or fuel cell electrodes. The electrical properties of the semiconductors depend on the presence of transition metal ions which can be in two valence states, and the conduction mechanism involves the transfer of electrons or positive holes from one ion to another of the same species. The production problem associated with this behaviour arises from the fact that the relative concentration of each valence state depends on both the temperature and the oxygen partial pressure of the atmosphere. 

Alloys Borates Solid-state Chemistry Carbides Transition Metal Solid-state Chemistry Chalcogenides Solid-state Chemistry Diffraction Methods in Inorganic Chemistry Electronic Structure of Solids Fluorides Solid-state Chemistry Halides Solid-state Chemistry Intercalation Chemistry Ionic Conductors Magnetic Oxides Magnetism of Extended Arrays in Inorganic Solids Nitrides Transition Metal Solid-state Chemistry Noncrystalline Solids Oxide Catalysts in Solid-state Chemistry Oxides Solid-state Chemistry Quasicrystals Semiconductor Interfaces Solids Characterization by Powder Diffraction Solids Computer Modeling Superconductivity Surfaces. 

Bockris and co-workers (317-320) conducted systematic studies on a variety of perovskite oxide catalysts in alkaline solutions and found the kinetics of the OER to have no functional dependence on the semiconductor-type properties of these oxides. The kinetics were found to improve with a decrease of magnetic moment, with a decrease of the enthalpy of formation of transition metal hydroxides, and with an increase in the number of d electrons in the transition metal ion. Thus, it has been suggested that, on the series of perovskites, there is a common slow step, OH desorption, with the differing —OH bond strength giving different isotherms and hence b values (i.e.. 

Jin, Z., Fukumura, T., Kawasaki, M Ando, K., Saito, H., Sekiguchi, T., Yoo, Y.Z., Murakami, M., Matsumoto, Y, Hasegawa, T. and Koinuma, H. (2001) High throughput fabrication of transition-metal-doped epitaxial ZnO thin films a series of oxide-diluted magnetic semiconductors and their properties. Applied Physics Letters, 78, 3824. 

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