Lithography, high-resolution

A photosensitive composition, consisting of an aromatic azide compound (4,4 -diazidodi-phenyl methane) and a resin matrix (poly (styrene-co-maleic acid half ester)), has been developed and evaluated as a negative deep UV resist for high resolution KrF excimer laser lithography. Solubility of this resist in aqueous alkaline developer decreases upon exposure to KrF excimer laser irradiation. The alkaline developer removes the unexposed areas of this resist. 

In this paper, the material characteristics and lithographic evaluation of this new resist are demonstrated. The resist meets the requirements for KrF excimer laser lithography, which exhibits high sensitivity, high resolution and high aspect ratio pattern profiles. 

High resolution negative resists are needed for masked ion beam lithography (MIBL) and for the fabrication of MIBL masks by E-beam lithography (EBL). The MOTSS copolymer resists were developed to obtain the resolution of fine features that a bilevel resist can best provide. The flexibility afforded by choosing the structure of the HS, the copolymer composition, and the molecular weight allows a resist to be tailored by simple synthesis adjustments to have the particular sensitivity and etch protection which best suits the application. 

In other studies on MOS structures, the two types of hysteresis, normal and abnormal, are suggested to arise from the ion displacement in the insulator and to the trapping at the interface states. The presence of site-radiation-induced polymerization has been used to provide increased film stability and has been described as an application for high-resolution electron beam lithography for the fabrication of microcircuitry. 

A New Approach to High-Resolution Lithography Based on Conducting Organic Charge Transfer Salts... 

In the course of our research on organic metals, we discovered that certain of these materials can function as electron-beam resists for high resolution lithography with a combination of unique features that have no parallel among conventional resist materials. ... 

ENGLER ET AL. High-Resolution Lithography Literature Cited... 

The field of laser lithography (also often called laser microfabrication) branched out from multiphoton excitation microscopy and has become established during the last decade. The principles of two-photon microscopy, which has enabled high-resolution 3D imaging [3,4] and optical memory [5], were gradually adapted for 3D laser hthography [6]. A relevant collection of seminal papers on the field can be found in [7]. 

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