Leakage current substrates

Fig. 10.8 aZTT Figure of Merit ( Eb,=CVbr/A, in gC/cmz) and leakage currents (measured at a stored charge of 7. iC/cm2, current density measured in A/cm2) as a function of position on the substrate. 

The measured values of leakage current for each of the 72 test substrates over the initial 2 month test period are listed in table... 

In these experiments, the potential distribution was measured under conditions where the interfacial current density was minimized by the use of an inert electrolyte. If the electron-transfer rate across the interface had truly been zero (Ret = °°), the whole 2 film would have eventually charged up to the applied potential it was the unavoidable leakage current across the interface and the relatively short time scale of our experiments that prevented this from happening. These experiments show that even when Rct is maximized, ion motion through the nanoporous film causes the applied potential to drop near the substrate electrode in nonilluminated DSSCs. As we showed earlier, decreasing Rct causes the applied potential to drop even closer to the substrate electrode. 

Leakage-current is reduced and the speed is improved in the imager of JP-A-59047759, in which a thin layer of n-type is formed at the surface of a p-type substrate. 

The leakage current of the imager presented in JP-A-6237005 is reduced. N -type photodetector regions which have been formed in a p-type substrate are surrounded by n-type regions at the surface portion of the substrate. 

Kawase et al. [17] fabricated All-polymer thin film transistors by inkjet printing technique. They used these transistors as active-matrix backplane for information displays. This field has been dominated by amorphous Si TFTs and large liquid crystal displays with an amorphous Si TFT active matrix backplane have been manufactured at a reasonable cost. An organic TFT is expected to reduce the cost even more, and to be applied to flexible displays based on a plastic substrate. The TFT characteristics required for active-matrix displays are (1) sufficient drain cmrent, (2) low off current, (3) low gate leakage current through an insulator, (4) small gate overlap capacitance and (5) uniform characteristics. 

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