Grains layers

To conclude this section, we note that a theoretical treatment of the phenomena described can be conducted on the basis of the earlier model by introducing into it an additional parameter, the characteristic depth of the layer (grain size) of dispersion. This parameter seems to be close to the average length of a crack, whose physical meaning was discussed in Section VI. 

Gas-diffusion to surfaces is mainly dependent on reactor configuration (geometry) and is to be taken under considerations when the membrane architecture includes a porous layer (grain size, porosity, interconnection shapes and dimensions,...). 

Btoan, N. (1994) Conduction models in gas-sensing SnOj layers grain-size effects and ambient atmosphere influence , Sensors and Actuators B Chemical, 17(3), 241-6, DOI 10.1016/0925-4005(93)00873-W... 

GM (gradient-mixer)-spreader or -applicator gradient development, gradient elution gradient layer grain size, particle size... 

Li et found that the corrosion behavior of low-carbon steel with an NC outer layer (grain size about 20 nm), which was prodirced by USSP, was affected by the grain size, as shown in Fig. 4.15. When the grain size was... 

Figure B3.6.3. Sketch of the coarse-grained description of a binary blend in contact with a wall, (a) Composition profile at the wall, (b) Effective interaction g(l) between the interface and the wall. The different potentials correspond to complete wettmg, a first-order wetting transition and the non-wet state (from above to below). In case of a second-order transition there is no double-well structure close to the transition, but g(l) exhibits a single minimum which moves to larger distances as the wetting transition temperature is approached from below, (c) Temperature dependence of the thickness / of the enriclnnent layer at the wall. The jump of the layer thickness indicates a first-order wetting transition. In the case of a conthuious transition the layer thickness would diverge continuously upon approaching from below.

From polarization curves the protectiveness of a passive film in a certain environment can be estimated from the passive current density in figure C2.8.4 which reflects the layer s resistance to ion transport tlirough the film, and chemical dissolution of the film. It is clear that a variety of factors can influence ion transport tlirough the film, such as the film s chemical composition, stmcture, number of grain boundaries and the extent of flaws and pores. The protectiveness and stability of passive films has, for instance, been based on percolation arguments [67, 681, stmctural arguments [69], ion/defect mobility [56, 57] and charge distribution [70, 71]. 

Extended defects range from well characterized dislocations to grain boundaries, interfaces, stacking faults, etch pits, D-defects, misfit dislocations (common in epitaxial growth), blisters induced by H or He implantation etc. Microscopic studies of such defects are very difficult, and crystal growers use years of experience and trial-and-error teclmiques to avoid or control them. Some extended defects can change in unpredictable ways upon heat treatments. Others become gettering centres for transition metals, a phenomenon which can be desirable or not, but is always difficult to control. Extended defects are sometimes cleverly used. For example, the smart-cut process relies on the controlled implantation of H followed by heat treatments to create blisters. This allows a thin layer of clean material to be lifted from a bulk wafer [261. 

Plywood has essentiahy equal stability in both panel directions and is almost as stable as the parent wood in the direction of the wood grain. Strength properties in bending are roughly proportional in each panel direction to the amount of wood in those layers closest to the surface which are parahel to the wood grain direction. Thus as the number of phes increases, these bending properties become more equalized in both panel directions. 

Fig. 3. An overview of atomistic mechanisms involved in electroceramic components and the corresponding uses (a) ferroelectric domains capacitors and piezoelectrics, PTC thermistors (b) electronic conduction NTC thermistor (c) insulators and substrates (d) surface conduction humidity sensors (e) ferrimagnetic domains ferrite hard and soft magnets, magnetic tape (f) metal—semiconductor transition critical temperature NTC thermistor (g) ionic conduction gas sensors and batteries and (h) grain boundary phenomena varistors, boundary layer capacitors, PTC thermistors.

The most significant commercial product is barium titanate, BaTiO, used to produce the ceramic capacitors found in almost all electronic products. As electronic circuitry has been rniniaturized, demand has increased for capacitors that can store a high amount of charge in a relatively small volume. This demand led to the development of highly efficient multilayer ceramic capacitors. In these devices, several layers of ceramic, from 25—50 ]lni in thickness, are separated by even thinner layers of electrode metal. Each layer must be dense, free of pin-holes and flaws, and ideally consist of several uniform grains of fired ceramic. Manufacturers are trying to reduce the layer thickness to 10—12 ]lni. Conventionally prepared ceramic powders cannot meet the rigorous demands of these appHcations, therefore an emphasis has been placed on production of advanced powders by hydrothermal synthesis and other methods. 

Chemical Inhomogenities or Compositional Separation. Compositional separation at the grain boundaries influences the magnetic interactions of the individual grains. Deposition parameters such as temperature, substrate material, and the use of a seed layer play an important role. 

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