Semiconductors, layered, formation

Zhirko Yu.I., and Zharkov I.P. (2003) Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals. Semicond. Phys. Quantum Electronics and Optoelectronics. 6(2), 134-140. 

The last technique commonly employed to deposit metals for compound semiconductors is electroplating (150). This technique is usually used where very thick metal layers are desired for very low resistance interconnects or for thick wire bond pads. Another common use of this technique is in the formation of air-bridged interconnects (150), which are popular for high speed electronic and optoelectronic circuits. 

The treatment of LB films of copper behenate (10-50 layers) with H2S gas resulted in formation of the semiconductor CU2S [177]. In this case, the LB films of behenic acid alone were formed and then exposed to solutions of copper chloride. Conversion of the carboxyl groups to carboxylate groups upon copper complexation was confirmed by infrared spectroscopy. Resistivity measurements versus temperature confirmed the formation of semiconducting CU2S in one case, and showed a linear increase in log(R) versus IT K). All of the samples became insulators on exposure to air maintaining the conductivity required storage under vacuum. The formation of CuiS sheets in some of the sample was concluded from optical microscopy and resistivity data. 

Conventional electrodeposition from solutions at ambient conditions results typically in the formation of low-grade product with respect to crystallinity, that is, layers with small particle size, largely because it is a low-temperature technique thereby minimizing grain growth. In most cases, the fabricated films are polycrystalline with a grain size typically between 10 and 1,000 nm. The extensive grain boundary networks in such polycrystalline materials may be detrimental to applications for instance, in semiconductor materials they increase resistivity... 

A variety of compound semiconductors have been successfully prepared by this technique. Much of the work concerning ECALE has been concentrated on the deposition of CdTe on An substrates. Notwithstanding the inherent problems of the system (for instance, a 10% lattice mismatch), the formation of CdTe epitaxial layers became a model example of ECALE synthesis. In their pioneering studies, Stickney and co-workers [27, 28] have focused on the deposition of the compound on... 

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