Junctions OFETs

One of the critical operating junctions in OFET devices is the source and drain contact to the channel. Any barrier between the contacts and the channel will appear in series and impede the flow of charge through the device. The source and drain electrode formation and structure can also influence the properties of the transistor channel itself. Crystal growth nucleated on the source and drain and the processes used to pattern the source and drain electrodes can have a significant effect on overall device performance. 

In fact, there are still some uncertainties about the applicability of Schottky-Mott model to 0/0 heterojunctions. For example, it is not clear whether the energy-level alignment is controlled only by the constituents of the heterojunction and is independent of the substrates and the formation sequence of the junction. In this chapter, we also discuss the electronic structures of some representative 0/0 heterojunctions and investigate the substrate effects on the energy-level alignment. In Section 6.7, we address the implications of the aforementioned for the design of ambipolar OFETs and stacked OLEDs. 

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