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Interface film/electrolyte

Figure 17. Energy for the nucleation of a surface film on metal electrode. M, metal OX, oxide film EL, electrolyte solution. Aj is the activation barrier for the formation of an oxide-film nucleus and rj is its critical radius. 7 a is the interfacial tension of the metal-electrolyte interface, a is the interfacial tension of the film-electrolyte interface. (From N. Sato, J. Electro-chem. Soc. 129, 255, 1982, Fig. 5. Reproduced by permission of The Electrochemical Society, Inc.)... Figure 17. Energy for the nucleation of a surface film on metal electrode. M, metal OX, oxide film EL, electrolyte solution. Aj is the activation barrier for the formation of an oxide-film nucleus and rj is its critical radius. 7 a is the interfacial tension of the metal-electrolyte interface, a is the interfacial tension of the film-electrolyte interface. (From N. Sato, J. Electro-chem. Soc. 129, 255, 1982, Fig. 5. Reproduced by permission of The Electrochemical Society, Inc.)...
Figure 2.61 Schematic representation of the electrode/film/electrolyte interfaces. Figure 2.61 Schematic representation of the electrode/film/electrolyte interfaces.
Peled s Model Anode/Electrolyte Interface Film. In their proposal of SEI formation on a carbonaceous electrode in nonaqueous electrolytes, Dahn actually adopted Peled s model for lithium s surface and extended it to carbonaceous electrodes. By this model, a two-dimensional passivation film is established via a surface reaction. [Pg.92]

Fig. 11.1. The transmission line circuit used to model these data. The left hand end of the transmission line is at the electrode/film interface. The right hand end is at film/electrolyte interface. The extended resistances, RP and Rx, correspond to the resistance to motion of electrons between trimer centres and ions through the pores respectively, (a) The potential in the central line of the diagram is the potential within the film, and the connecting capacitors modify this potential to produce the driving potentials to drive current through the resistors. The CR kinetic circuit elements for the interfacial process can be seen at each end of the transmission line, (b) The modified circuit when the capacitance, C in equation (9) is not negligible. The potential at the trimer and in the pores is given by E and E ... Fig. 11.1. The transmission line circuit used to model these data. The left hand end of the transmission line is at the electrode/film interface. The right hand end is at film/electrolyte interface. The extended resistances, RP and Rx, correspond to the resistance to motion of electrons between trimer centres and ions through the pores respectively, (a) The potential in the central line of the diagram is the potential within the film, and the connecting capacitors modify this potential to produce the driving potentials to drive current through the resistors. The CR kinetic circuit elements for the interfacial process can be seen at each end of the transmission line, (b) The modified circuit when the capacitance, C in equation (9) is not negligible. The potential at the trimer and in the pores is given by E and E ...
The growth of barrier layers on Al occurs under conditions where oxide film dissolution is negligible. Film growth has been described quantitatively by a high field conduction model involving transport of both Al3+ cations and O2-or OH anions (90,91). Al3+ cations are transported to the film/electrolyte interface, react with water, and participate in film growth. O2- and OH anions are... [Pg.302]

Historically, this is the material which really sparked interest in the solar photoelectrolysis of water. Early papers on TiCh mainly stemmed from the applicability of TiCh in the paint/pigment industry255 although fundamental aspects such as current rectification in the dark (in the reverse bias regime) shown by anodically formed valve metal oxide film/ electrolyte interfaces was also of interest (e.g., Ref. 52). Another driver was possible applications of UV-irradiated semiconductor/electrolyte interfaces for environmental remediation (e.g., Refs. 256, 257). [Pg.183]

Dependence of -potential on surfactant kind and concentration. Detailed study with the method of equilibrium foam film of h(Cej) and A(pH) dependences in the absence of a surfactant, as well as h(C) at very low surfactant concentrations, gave (po 30 mV at the interface aqueous electrolyte solution/air [169,170,197]. It is important to note that this value of (po could be reconsidered in view of some recent results on numerical calculation of dispersion interactions in foam films [106,166,198]. For example, as shown by Kolarov, the (po value of 30 mV is reduced to about 15 mV when using the data on dispersion interactions reported in [166],... [Pg.138]

A layer that forms on top of a metal upon contact with the solution can be of three different types. If it is dense and nonconducting, it can protect the metal from further corrosion, but the system cannot be used as a battery, since the metal is totally isolated from the solution. If it is electronically and ionically conducting, reduction of the solvent at the film-electrolyte interface and oxidation of the metal at the metal-film interface can proceed freely, leading to a fast rate of self discharge. It is only when the film is both an ionic conductor and an electronic insulator that the chemical pathway of spontaneous reduction of the solvent at the anode is jirevented, whereas the electrochemical pathway of oxidation of the metal at the anode and reduction of the solvent at the cathode can proceed at a sufficient rate to allow the... [Pg.246]

The Nanocrystalline Film-Electrolyte Interface and Charge Storage Behavior in the Dark... [Pg.2702]

Figure 31 contains a schematic representation of the nanocrystalline semiconductor film-electrolyte interface at equilibrium (Figure 31a) and the corresponding situation under bandgap irradiation of the semiconductor (Figure 31b) [9]. Since the difiFusion length of the photogenerated carriers is usually larger than the physical dimensions of the structural units, holes and electrons can reach the impregnated electrolyte phase before they are lost via bulk recombination. This contrasts the situation with the single-crystal cases discussed earlier. Figure 31 contains a schematic representation of the nanocrystalline semiconductor film-electrolyte interface at equilibrium (Figure 31a) and the corresponding situation under bandgap irradiation of the semiconductor (Figure 31b) [9]. Since the difiFusion length of the photogenerated carriers is usually larger than the physical dimensions of the structural units, holes and electrons can reach the impregnated electrolyte phase before they are lost via bulk recombination. This contrasts the situation with the single-crystal cases discussed earlier.
Shortly after Chidsey and co-workers initial papers. Miller et al. reported full characterization of Au-S(CH2) OH monolayers (System 5, = 6-12, 14, 16) by ellipsometry, XPS and electrochemical methods [44]. The nearly defect-free nature of the monolayers was attributed to hydrogen-bonding interactions between neighboring adsorbate chains at the film-electrolyte interface. The level of defects was probed by varying bridging halides, which should change electron-transfer processes at pinholes from outer to inner sphere. Electrochemical annealing was found to improve the EBE [44]. Later, they showed that defects in the SAMs are on the... [Pg.2931]

Figure n.13 (a) A schematic picture of a current collector/polymer film/electrolyte solution system with electron and ion equilibria across the interfaces (b) Equations for the chemical potentials of polarons and anions, and the related Galvani potentials. The effect of perm-... [Pg.387]

Traditional electrolytic charge transfer at the gas film-electrolyte interface forming oxygen according Faraday s law (0.25 mol/mol electron). [Pg.33]

Given the nature of the polymer and the conduction pathway, a simple homogeneous model cannot be applied to thin conducting polymer film-electrolyte systems [27,28,31]. For thin films (< lOOnm) with pore sizes estimated to range from 1 to 4 nm, the porous surface-electrolyte interface will dominate the electrical and physical properties of the sensor. Since the oxidation of the porous surface occurs first, the interface properties play a major role in determining device response. To make use of this information for the immunosensor response, the appropriate measurement frequency must be chosen to discriminate between bulk and interface phenomena. To determine the optimum frequency to probe the interface, the admittance spectra of the conducting polymer films in the frequency range of interest are required. [Pg.463]

In the steady state, a passive substrate can corrode at constant film thickness. For this case, the following ITR at the interface oxide/electrolyte are considered ... [Pg.254]


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See also in sourсe #XX -- [ Pg.75 ]

See also in sourсe #XX -- [ Pg.75 ]




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Electrolyte interface

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