Indium nitride properties

From the results presented in this Datareview, the quality of the crystals is clearly one of the main problems for the precise determination of the physical properties of the group III nitrides. This is especially true for indium nitride, where no elastic moduli could be measured, due to the lack of single crystals. The differences between the elastic moduli measured with the same technique (Brillouin scattering) in GaN is further proof that the quality and the nature (bulk single crystals or epitaxial layer) of the samples is of primary importance. 

In the absence of good quality single crystal samples, the physical properties of indium nitride have been measured on non-ideal thin films, typically ordered polycrystalline material with crystallites in the 50 nm to 500 nm range. Structural, mechanical and thermal properties have only been reported for epitaxial films on non-lattice-matched substrates. 

Basic data on the physical properties of indium nitride are sparse and the following sections include instances of values uncorroborated by repeated measurement. In cases where data are absent, the chemical trends across the nitride group have made it possible for first-order estimates to be made and these are included where thought appropriate. The reader is invited to consider these extrapolations by consulting firmer values for AIN and GaN elsewhere in this volume more firmly established data await the advent of better quality material. 

A4.3 Basic physical properties of InN TABLE 1 Lattice parameters of indium nitride. 

TABLE 4 Thermal and thermodynamic properties of indium nitride. 

E REFRACTIVE INDEX AND DIELECTRIC PROPERTIES OF INDIUM NITRIDE... 

Strite, S.C. Ill (1993) Investigation of the Gallium Nitride, Aluminum Nitride and Indium Nitride Semiconductors Structural, Optival, Electronic and Interfacial Properties, UMI Company, 118. 

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