Impurity recombination

There are many ways of increasing tlie equilibrium carrier population of a semiconductor. Most often tliis is done by generating electron-hole pairs as, for instance, in tlie process of absorjition of a photon witli h E. Under reasonable levels of illumination and doping, tlie generation of electron-hole pairs affects primarily the minority carrier density. However, tlie excess population of minority carriers is not stable it gradually disappears tlirough a variety of recombination processes in which an electron in tlie CB fills a hole in a VB. The excess energy E is released as a photon or phonons. The foniier case corresponds to a radiative recombination process, tlie latter to a non-radiative one. The radiative processes only rarely involve direct recombination across tlie gap. Usually, tliis type of process is assisted by shallow defects (impurities). Non-radiative recombination involves a defect-related deep level at which a carrier is trapped first, and a second transition is needed to complete tlie process. 

If tlie level(s) associated witli tlie defect are deep, tliey become electron-hole recombination centres. The result is a (sometimes dramatic) reduction in carrier lifetimes. Such an effect is often associated witli tlie presence of transition metal impurities or certain extended defects in tlie material. For example, substitutional Au is used to make fast switches in Si. Many point defects have deep levels in tlie gap, such as vacancies or transition metals. In addition, complexes, precipitates and extended defects are often associated witli recombination centres. The presence of grain boundaries, dislocation tangles and metallic precipitates in poly-Si photovoltaic devices are major factors which reduce tlieir efficiency. 

Fig. 1. Schematic diagram of semiconductor materials showing band gaps where CB and VB represent the conduction band and valence band, respectively and 0 and 0, mobile charge. The height of the curve represents the probabiUty of finding an electron with a given momentum bound to an N-isoelectronic impurity, (a) Direct band gap the conduction band minimum, F, is located where the electrons have 2ero momentum, ie, k = 0. The couples B—B, D—A, B—D, and B—A represent the various routes for radiative recombination. See text, (b) Indirect band gap the conduction band minimum, X, is located...

GaP N, is clearly evident. The addition of N shifts the peak to longer wavelengths and broadens the spectral emission. The curves for the AIGalnP LEDs represent devices of three different alloy compositions, all exhibiting recombination for the conduction band direct minimum. The emission spectmm of the blue InGaN LED exhibits uniquely broad emission, most likely as a result of recombination via deep Zn impurities levels (23). 

The variations in D and D and the much larger value for In show the limitations of a simple hydrogen atom model. Other elements, particularly transition metals, tend to introduce several deep levels in the energy gap. For example, gold introduces a donor level 0.54 eV below D and an acceptor level 0.35 eV above D in siHcon. Because such impurities are effective aids to the recombination of electrons and holes, they limit carrier lifetime. 

Comparative study of LB films of cytochrome P450 wild type and recombinant revealed similar surface-active properties of the samples. CD spectra have shown that the secondary structure of these proteins is practically identical. Improved thermal stability is also similar for LB films built up from these proteins. Marked differences for LB films of wild type and recombinant protein were observed in surface density and the thickness of the deposited layer. These differences can be explained by improved purity of the recombinant sample. In fact, impurity can disturb layer formation, preventing closest packing and diminishing the surface density and the average monolayer thickness. Decreased purity of... 

Typically, the reaction mechanism proceeds as follows [6], By photoreaction, two chlorine radicals are formed. These radicals react with the alkyl aromatic to yield a corresponding benzyl radical. This radical, in turn, breaks off the chlorine moiety to yield a new chlorine radical and is substituted by the other chlorine, giving the final product. Too many chlorine radicals lead to recombination or undesired secondary reactions. Furthermore, metallic impurities in micro reactors can act as Lewis catalysts, promoting ring substitution. Friedel-Crafts catalyst such as FeClj may induce the formation of resin-Uke products. 

The photocurrent density (/ph) is proportional to the light intensity, but almost independent of the electrode potential, provided that the band bending is sufficiently large to prevent recombination. At potentials close to the flatband potential, the photocurrent density again drops to zero. A typical current density-voltage characteristics of an n-semiconductor electrode in the dark and upon illumination is shown in Fig. 5.61. If the electrode reactions are slow, and/or if the e /h+ recombination via impurities or surface states takes place, more complicated curves for /light result. 

Gold has been used for many years as a minority carrier lifeline controller in Si. As such, it is introduced in a controlled manner, usually by diffusion into transistor structures to decrease the carrier lifetime in the base region in order to increase the switching speed (Ravi, 1981). Conversely, the uncontrolled presence of Au is clearly deleterious to the performance of devices, both because of the increased recombination within the structure and the increase of pipe defects, which can cause shorting of the device. These pipe defects consist of clusters of metallic impurities at dislocations bounding epitaxial stacking faults. 

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