Implantation of reactive ions

The remaining studies on oxidation of metals have been performed mainly with the aim of looking into the corrosion properties of materials. Thus, in 1971 it was found that the implantation of boron generated passivation in copper The oxidation rate of zircaloy4 in oxygenated water at 300°C was suppressed by ion bom-bardment Implantation of reactive ions such as O and chemically inactive ones such as Ar and Xe yielded the same retardation of the oxidation, suggesting that the lattice damage was the main reason for this effect. 

CHEMISTRY INDUCED BY IMPLANTATION OF REACTIVE IONS IN WATER ICE... 

Experiments of implantation of reactive ions are not numerous and consequently their application has been little discussed. A noteworthy exception is the case of SO2. It has been observed on Europa and Callisto and it has been interpreted as formed by magnetospheric sulfur implanted in water ice. We have found only an upper limit to the formation yield of sulfur dioxide after S implantation that does not permit us to be conclusive about the effective relevance of the process at Europa. The finding of the formation of a sulfate, most probably hydrated sulfuric acid, could be of extreme relevance to support the suggested radiolytic sulfur cycle at Europa. 

Hou, P.Y., and J. Stringer, 1988, Ion-implantation of Reactive Elements in Improving Adhesion of Thermally Grown Chromia Scales Report LBL -25031, April 1988 (Lawrence Berkeley Laboratory, Berkeley, CA). 

It is likely that the answers to these questions will come only from more selective and sophisticated experiments than have been done hitherto, although some useful directions have been established. The use of high-sensitivity electron spin resonance for the study in situ of anticipated radical species will likely be possible, if the background signals from other radiation-produced species are not too intense. Studies of the chemistry of implanted atoms and ions in solid organometallic substrates will make it possible to start with totally unbound atoms which suffer no Auger ionization and thus to simulate the extreme of the total recoil. Careful studies of the thermal annealing effects, especially in the presence of reactive atmospheres, will... 

A wide variety of process-induced defects in Si are passivated by reaction with atomic hydrogen. Examples of process steps in which electrically active defects may be introduced include reactive ion etching (RIE), sputter etching, laser annealing, ion implantation, thermal quenching and any form of irradiation with photons or particles wih energies above the threshold value for atomic displacement. In this section we will discuss the interaction of atomic hydrogen with the various defects introduced by these procedures. 

Coloma F, Marquez F, Rochester CH, Anderson JA (2000) Determination of the nature and reactivity of copper sites in Cu-Ti02 catalysts. Phys Chem Chem Phys 2 5320-5327 Umebayashi T, Yamaki T, Itoh H, Asai K (2002) Analysis of electronic structures of 3d transition metal-doped Ti02 based on band calculations. J Phys Chem Solids 63 1909-1920 Yamashita H, Ichihashi Y, Takeuchi M, Kishiguchi S, Anpo M (1999) Characterization of metal ion-implanted titanium... 

Figure 10 Effect of the depth profile of V ions in the V-ion-implanted titanium oxide photocatalyst on their photocatalytic reactivity for the decomposition of NOx under visible light (X > 450 nm) irradiation at 295 K.

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