IEEE-1394 devices

The next option allows you to select an OHQ-compliant IEEE-1394 device to route a DV video signal through your camcorder and out to a television set. When an OHCI device is selected, additional information is displayed in the Details box. 

Additional options become visible when an OHCI-compatible IEEE-1394 device is selected. 

Appendix C herein gives the IEEE device numbers that are most commonly used, together with their descriptions that are typically used in the oil industry. 

The requirements for the different types of HV and LV circuits in a typical oil industry power system are summarised below. The IEEE device numbers commonly used in the oil industry are listed in sub-section C.l. 

W. D. Johnston, Jr., and K. E. Strege, 38th Annual IEEE Device Research Conf. Abstracts, Cornell University, Vol. IVB-3, June 1980. 

Y. Takemuia and co-workeis, IEEE Trans. Electron. Devices ED-32(8), 1402 (1985). 

J. A. Oberteuffer, Magnetic Separation M Kevieiv of Principles, Devices and Applications, Institute of Electrical and Electronics Engineers, Inc., 1977. P. A. Cliermemnykli and I. V. Kurchatov, IEEE Trans. Magnetics, 28(1), 651—658 (Jan. 1992). 

Ensure that the instrument has appropriate output ports to drive other devices such as storage and computational facilities. Wherever possible, these ports should conform to the IEEE interface standards. 

Tuckerman D, Pease RFW (1981) High performance heat sinking for VLSI. IEEE Electron Device... 

Hetsroni G, Mosyak A, Segal Z (2001) Nonuniform temperature distribution in electronic devices cooled by flow in parallel micro-channels. IEEE Trans Comp Packag Technol 24(1) 16-23 Ho CM, Tai Y-C (1998) Micro-electronic mechanic systems (MEMS) and fluid flows. Ann Rev Fluid Mech 30 5-33... 

Awaya, N., et al., Evaluation of a Copper Metallization Process and the Electrical Characteristics of Copper-Interconnected Quarter-Micron CMOS, IEEE Transactions of Electron Devices, 43(8) 1206-12 (August 1996)... 

M. Nitta and M. Haradome, IEEE Trans. Electron Devices, 26 (1979) 247 - 249... 

T. Miyamoto, H. Sakurai, H. Takabaya-shi, M. Aoki 1989, (A development of a permanent magnet assembly for MRI devices using Nd-Fe-B material), IEEE Trans. Magn. 25, 3907-3909. 

Xing L., Zuoqing W., Cheng J.K., Viens M., Cheeke J.D.N., Ultrasonic thin-walled tube wave structure for sensing devices, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 1996 43 331-336. 

M. Barbara, A. Bonfiglio, L. Raffo, A. Alessandrini, P. Facci, and I. Barak, A SMOS fully integrated sensor for electronic detection of DNA hybridization. IEEE Electron Device Lett. 27, 595-597 (2006). 

Y. Kim, S. Lopatin, Y. Shacham-Diamand, in Proc. IEEE/Comell Conf. on Adv. Concepts in High Speed Semicond. Devices and Circuits, M. Adlerstein, (eds.), IEEE Electron Devices Soc., 192 (1997). 

Landauer R (1996) Need for critical assessment. IEEE Trans Electron Devices 43 1637... 

Chason, M. Brazis, P. W. Zhang, J. Kalyanasundaram, K. Gamota, D. R. 2005. Printed organic semiconducting devices. Proc. IEEE 93 1348-1356. 

Kane, M. G. Goodman, L. Firester, A. H. van der Wilt, P. C. Limanov, A. B. Im, J. S. 2005.100MHz CMOS circuits using sequential laterally solidified silicon thin-film transistors on plastic. IEEE International Electron Devices Meeting Tech. Digest 2005 1087-1089. 

Hannah, H. I. Tiwari, S. Khan, I. 1996. Fast and long-retention-time nanocrystal memory. IEEE Trans. Electron Devices. ED-43 1553-1558. 

Chen, C.-Y. Kanicki, J. 1996. High field-effect-mobility a-Si H TFT based on high deposition rate PECVD materials. IEEE Electron Device Lett. 17 437-439. 

Sameshima, T. Usui, S. Sekiya, M. 1986. XeCl excimer laser annealing used in the fabrication of poly-Si TFTs. IEEE Electron Device Lett. 7 276-278. 

Siemer, K. Klaer, J. Luck, I. Braunig, D. 2000. Influence of crystal orientation on device performance of CuInS2 solar cells. Proceedings of the 28th IEEE Photovoltaic Specialists Conference. IEEE, Piscataway, NJ. pp. 630-633. 

Lorenz, M. Hochmuth, H. Natusch, D. Lippold, G. Svetchnikov, V. L. Kaiser, T. Hein, M. A. Schwab, R. Heidinger, R. 1999. Ag-doped double-sided PLD-YBCO thin films for passive microwave devices in future communication systems. IEEE Trans. Appl. Supercond. 9 1936-1939. 

Subramanian, V. Frechet, J. Chang, P. Huang, D. Lee, J. Molesa, S. Murphy, A. Redinger, D. Volkman, S. 2005. Progress toward development of all-printed RFID tags Materials, processes, and devices. Proc. IEEE 93 1330-1338. 

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