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ICISS

In addition to elemental analysis, LEIS can be used to provide information about the local surface structure at the probed atom. This application of LEIS was improved by using alkali ions (e.g., Li and Na) and large scattering angles (near 180°) in so-called impact-collision ISS (ICISS) [29] Alkali ions have strong trajectory-dependent neutralization cross sections and give relatively intense... [Pg.144]

Fig. 12. Schematic concept of the (neutral) impact collision ion scattering spectroscopy (N)ICISS for 180°. By the measurement of the critical glancing angles I c for the onset of backscattering at a known surface geometry, that is, lattice constant d, the shadow cone size can be determined experimentally (compare with Fig. 1) [21]. Reprinted with permission from J. W. M. Frenken and J. F. van der Veen, Phys. Rev. Lett., 54, 134 (1985), 1985, The American Physical Society. Fig. 12. Schematic concept of the (neutral) impact collision ion scattering spectroscopy (N)ICISS for 180°. By the measurement of the critical glancing angles I c for the onset of backscattering at a known surface geometry, that is, lattice constant d, the shadow cone size can be determined experimentally (compare with Fig. 1) [21]. Reprinted with permission from J. W. M. Frenken and J. F. van der Veen, Phys. Rev. Lett., 54, 134 (1985), 1985, The American Physical Society.
Fig. 94. Possible structure of the Si(l 11) 2>/3 x 2-73 -Sn as proposed on the basis of the data obtained by STM [91T5], ICISS [92W6] and RBS [94T1]. The model corresponds to Sn coverage of 1.17 ML and suggests the presence of two layers of Sn. Relative heights are given with respect to the topmost Sn atoms depicted by the largest circles. The first layer Si atoms are shown by small open circles [91T5]. Fig. 94. Possible structure of the Si(l 11) 2>/3 x 2-73 -Sn as proposed on the basis of the data obtained by STM [91T5], ICISS [92W6] and RBS [94T1]. The model corresponds to Sn coverage of 1.17 ML and suggests the presence of two layers of Sn. Relative heights are given with respect to the topmost Sn atoms depicted by the largest circles. The first layer Si atoms are shown by small open circles [91T5].
Figure 4 Basic principie of iCiSS. (A) For beam incidence at an angie ij/c the edge of the shadow cone from atom A coincides with the position of atom B. (B) Experimentai iCiSS spectrum showing the scattering intensity from C in the TiC(OOI) surface as a function of angie of incidence i/r. The criticai angie j/c is indicated. (Part B is reproduced with permission from Aono M and Souda R (1985) Quantitative surface atomic structure anaiysis. Japanese Journal of Applied Physics 24 1249 institute of Pure and Appiied Physics, Tokyo, Japan.)... Figure 4 Basic principie of iCiSS. (A) For beam incidence at an angie ij/c the edge of the shadow cone from atom A coincides with the position of atom B. (B) Experimentai iCiSS spectrum showing the scattering intensity from C in the TiC(OOI) surface as a function of angie of incidence i/r. The criticai angie j/c is indicated. (Part B is reproduced with permission from Aono M and Souda R (1985) Quantitative surface atomic structure anaiysis. Japanese Journal of Applied Physics 24 1249 institute of Pure and Appiied Physics, Tokyo, Japan.)...
DFB distributed-feedback ICISS impact ion scattering spectroscopy... [Pg.1140]

International Commission on Intervention and State Sovereignty/ICISS (2001) The Responsibility to Protect. Ottawa International Development Research Centre. [Pg.413]

ARUPS) for the valence DOS features, and X-ray photoelectron spectroscopy (XPS) for the energy shift of a core band. Surface extended X-ray absorption fine-structure spectroscopy (SEXAFS) and impact-collision ion-scattering spectroscopy (ICISS) are also commonly used in the chemisorption studies. [Pg.5]

SIMS and secondary electron-emission examination revealed that the Cu layers deposited on the c(2 x 2)-O/Ni(100) substrate are always covered by an adsorbed layer of oxygen [2]. AES [3], ICISS [4], work function measurements [5, 6], and STM observations [7, 8] revealed that oxygen atom is always present on the surface of the grown Cu films deposited on an oxygen pre-covered Ru(OOOl) surface. Under certain conditions (6>o = 0.2-0.4 ML, T 400 K), the work function, monitored during film deposition, oscillates with a period of one monolayer of copper epitaxial growth. [Pg.149]


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See also in sourсe #XX -- [ Pg.366 ]

See also in sourсe #XX -- [ Pg.325 ]




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Impact collision ion scattering spectroscopy ICISS)

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