Neutral hydrogen

At the same time, it was demonstrated that hydrogen neutralization of dopant impurities also occurs in compound semiconductors. This was first achieved with n-type dopants in GaAs (Chevallier etal., 1985) and then with p-type dopants in GaAs (Johnson et al., 1986b). 

Several practical applications of hydrogen neutralization of impurities in compound semiconductors are described, including waveguiding, the lateral confinement of carriers for injection lasers, and the generation of resistive regions. Intentional hydrogenation has also been used to fine tune the properties of field-effect transistors. Finally, some remaining problems are identified. 

Another demonstration that hydrogenation neutralizes acceptors is the decrease in free-carrier absorption observed during infrared transmission experiments by Pankove et al. (1985). 

HYDROGEN NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN ARSENIC-DOPED EPILAYERS ON SILICON... 

In the first report of hydrogen neutralization of donor dopants in silicon, a novel bonding geometry was proposed for the donor-hydrogen complex... 

A spectroscopic calibration of the P—H concentration in InP Zn is obtained from the relation between the concentration of neutralized holes and the integrated absorption Ar of the 2287.7 cm-1 line rising after hydrogen neutralization ... 

Figure D1.6.6 latroscan TLC-FID chromatograms of (A) a lipid fraction enriched with neutral lipids isolated from cod flesh and stored in ice (B) neutral lipids spiked with authentic 1 -0-palmityl-glyceryl ether dipalmitate (GE), coinciding in position with authentic highly unsaturated acids such as 22 6n-3 (C) hydrogenated neutral lipids spiked with GE. The solvent system was 97 3 1 (v/v/v) hexane/diethyl ether/formic acid for 40 min. Abbreviations O, origin SF, solvent front FFA, free fatty acid PL, phospholipids SE, steryl ester ST, free sterol TG, triglyceride. Reproduced from Ohshima et al. (1987) with permission from AOCS Press.

Fig. 28. Representation of a hydrogenated field effect transistor. The carrier concentration in the active layer is controlled, before the gate deposition, by the hydrogen neutralization of the donors present in the highly silicon doped layer. The insert shows the free carrier concentration gradient from the gate, which results from the hydrogen diffusion. J. Chevallier and M. Aucouturier, Ann. Rev. Mater. Sci. 18, 219 (1988). Annual Reviews Inc.

In the context of hydrogen neutral beam attenuation kinetics in fusion plasmas, and charge exchange core plasma diagnostics, the important hydrogen atom processes are those with highly stripped impurity ions, Aqz (where Z is the atomic number of impurity, and q is its charge)... 

Hydrogenated Amorphous Silicon - Amorphous silicon with a small amount of incorporated hydrogen. The hydrogen neutralizes dangling bonds in the amorphous silicon, allowing charge carriers to flow more freely. 

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