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Hopping matrix element

In other words, we have expressed the interaction between the adsorbate and the metal in terms of A(e) and /1(e), which essentially represent the overlap between the states of the metal and the adsorbate multiplied by a hopping matrix element A(e) is the Kronig-Kramer transform of A(e). Let us consider a few simple cases in which the results can be easily interpreted. [Pg.239]

N adsorbed on Cu(100) [27], see Section 5 for more details. The experiment measures the N-2p density of states, i.e., the projection of the partial p-density of states onto the nitrogen adatom. The atomic level is split into two distinct levels which are bonding and antibonding, respectively, with respect to the Cu d-band. This represents the case when the hopping matrix element is larger than the width of the metal d-band. [Pg.65]

The opposite case, i.e., when the band width is much larger than the hopping matrix element, can be seen in Figure 2.5 for the unoccupied As states of adsorbed on Ag. This has been measured using XAS of Ar adsorbed on Ag, since Ar using the Z + 1 approximation becomes as an effect of the final core hole state [28]. We can directly see that the As level has become a broad asymmetric resonance. The adatom resonance has a tail towards lower energies with clear cut-off at the Fermi level. The 45 level mainly interacts with the delocalized unoccupied Ag sp electrons. Most of the 45 resonance is unoccupied which indicates that charge transfer has occurred from the adatom to the substrate. [Pg.65]

The hopping matrix element (t) is expressed as t tpjlA(>0), where A is... [Pg.204]

The energies and hopping matrix elements in this Hamiltomian can be calculated, if the single-particle real-space Hamiltomian /i( ) is known ... [Pg.221]

The main equation for the d-electron GF in PAM coincides with the equation for the Hubbard model if the hopping matrix elements t, ) in the Hubbard model are replaced by the effective ones Athat are V2 and depend on frequency. By iteration of this equation with respect to Aij(u>) one can construct a perturbation theory near the atomic limit. A singular term in the expansions, describing the interaction of d-electrons with spin fluctuations, was found. This term leads to a resonance peak near the Fermi-level with a width of the order of the Kondo temperature. The dynamical spin susceptibility in the paramagnetic phase in the hydrodynamic limit was also calculated. [Pg.154]

It is remarkable that Eq.(17) has exactly the same form as in the Hubbard model, only instead of a bare hopping matrix element 112 now we have the induced hopping element A12. Because equations of motion for iF-operators for PAM and the Hubbard model have the same form (with the only change 112 — A12) the equation of motion for a d-electron GF in PAM has the same form as in the Hubbard model [10]. [Pg.157]

Here the 7r-system is treated with a very simple, but still quantum mechanical method e.g. by the Hiickel Hamiltonian and MO LCAO approximation (which in the particular case of the Hiickel Hamiltonian gives the exact answer). No explicit interaction, i.e. junction, between the subsystems was assumed at that time however, the effects of the geometry of the classically moving nuclei were very naturally reproduced by a linear dependence of the one-electron hopping matrix elements of the bond length ... [Pg.108]

Note, in general case the effective Hamiltonian contains also the Coulomb interaction between doped holes and the interaction of quasiparticles via the phonon field. We dropped these terms here, because they do not contribute directly to the spin susceptibility. The hopping matrix element is Uj = tfj e rE /hcot [ + < SiSj >] where r . is the bare hopping inte-... [Pg.180]

Anderson s simple model to describe the electrons in a random potential shows that localization is a typical phenomenon whose nature can be understood only taking into account the degree of randomness of the system. Using a tight-binding Hamiltonian with constant hopping matrix elements V between adjacent sites and orbital energies uniformly distributed between — W/2 and W/2, Anderson studied the modifications of the electronic diffusion in the random crystal in terms of the stability of localized states with respect to the ratio W/V. [Pg.177]

The values in Table I are obtained assuming an n 2 distance exponent in the hopping matrix elements. Using 3 instead would increase these values by about a factor of 2. [Pg.149]

Figure 12.3 shows a schematic illustration of the resulting electron density of states projected onto the adatom in the Newns-Anderson model [17, 18] for two different cases. In this model, the interaction strength between the adatom wave function of one specific electronic level and the metal states is often denoted the hopping matrix element. When the hopping matrix element is much smaller than the bandwidth of the metal states, in this case the i-electrons, the interaction leads... [Pg.257]

In effect, we are dealing with a Hamiltonian like Eq. (3.1) with infinitely many states, N = The nearest-neighbor hopping matrix elements are A, and one can apply an external bias e, which induces a drift on the TB particle. In our simulations we have taken an ohmic spectral density (3.4) with a finite cutoff frequency ca. The two transport quantities of interest are the nonlinear mobility... [Pg.71]

A second clue comes from the anisotropy in the conductivity of these layered materials. We noted that the carriers have a rather small m within the planes, i.e. a greater than usual propensity for motion within each plane. This, however, contrasts sharply with their almost negligible conductivity in the direction normal to the planes, which may be related to an unusually small hopping matrix element for motion from plane to plane. Both features are reflected in the band structure calculations (10,11), which have specifically remarked upon the absence of dispersion within the conduction bands In the direction normal to the planes, as well as the small density of states at or near the Fermi level. The width of an energy band can be qualitatively identified with 1/m. It is also related to the overlap of nearest- and next-nearest (and even more distant) Warmier orbitals. A Warmier function (r-Rj) centered on the i atom or cell, is a compact... [Pg.108]

The coexistence of itinerant and localized 5f-states is a consequence of the interplay between hybridization with the conduction electrons and local Coulomb correlations. This partial localization of the 5f-states is found in many actinide intermetallic compounds. The underlying microscopic mechanism is an area of active current research (Lundin et al., 2000 Soderlind et al., 2000). LDA calculations show that the hopping matrix elements for different 5f orbitals vary. But it is of interest to understand why only the largest one of them is important and why the other ones are suppressed. [Pg.147]

ISIS intense spallation source at Vk V hopping matrix element... [Pg.2]


See other pages where Hopping matrix element is mentioned: [Pg.39]    [Pg.239]    [Pg.219]    [Pg.63]    [Pg.8]    [Pg.203]    [Pg.204]    [Pg.206]    [Pg.207]    [Pg.221]    [Pg.153]    [Pg.154]    [Pg.225]    [Pg.169]    [Pg.144]    [Pg.144]    [Pg.28]    [Pg.146]    [Pg.147]    [Pg.258]    [Pg.28]    [Pg.346]    [Pg.237]    [Pg.21]    [Pg.41]    [Pg.137]    [Pg.148]    [Pg.148]    [Pg.438]    [Pg.444]    [Pg.437]    [Pg.6]   
See also in sourсe #XX -- [ Pg.63 , Pg.65 ]

See also in sourсe #XX -- [ Pg.6 , Pg.8 , Pg.12 , Pg.17 ]

See also in sourсe #XX -- [ Pg.105 ]




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